A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Çiğdem Ş. Güçlü

Makale detayları

A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Yazarlar:

Çiğdem Ş. Güçlü

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.62-69

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001286706

pISSN:

2147-9542

Anahtar kelimeler:

Özet:

 The effects of the application of the TeO2:Cu-PVP interface to the Alp-Si MS type SD on the performance of the new AlTeO2:Cu doped PVPp-Si MPS SD were reviewed using forward and reverse bias V-I measurements. The thermionic emission TE and Cheung  Cheung functions were employed to ascertain the influences of an additional organic interfacial layer on the comparative outcomes of this research. Thus, some essential electrical attributes such as saturation current Is, ideality factor n, rectification-ratio R.R.IforwardIreverse, barrier height B.H. Φbo, and seriesshunt resistances RsRsh were computed. Furthermore, the density of surface states Nss was acquired from the V-I plots according to the Card  Rhoderick method. The observed experimental results indicated that the TeO2:Cu-PVP inter-layer enhanced the quality of MS type SD as respects obtained low reverse current, Nss, Rs, and high Rsh and R.R. values. All these results indicate that TeO2:Cu-PVP inter-layer can be used successfully instead of conventional insulators for its favored specifications like easy fabrication processes, low cost, and flexibility features.

 The effects of the application of the TeO2:Cu-PVP interface to the Alp-Si MS type SD on the performance of the new AlTeO2:Cu doped PVPp-Si MPS SD were reviewed using forward and reverse bias V-I measurements. The thermionic emission TE and Cheung  Cheung functions were employed to ascertain the influences of an additional organic interfacial layer on the comparative outcomes of this research. Thus, some essential electrical attributes such as saturation current Is, ideality factor n, rectification-ratio R.R.IforwardIreverse, barrier height B.H. Φbo, and seriesshunt resistances RsRsh were computed. Furthermore, the density of surface states Nss was acquired from the V-I plots according to the Card  Rhoderick method. The observed experimental results indicated that the TeO2:Cu-PVP inter-layer enhanced the quality of MS type SD as respects obtained low reverse current, Nss, Rs, and high Rsh and R.R. values. All these results indicate that TeO2:Cu-PVP inter-layer can be used successfully instead of conventional insulators for its favored specifications like easy fabrication processes, low cost, and flexibility features.

 The effects of the application of the TeO2:Cu-PVP interface to the Alp-Si MS type SD on the performance of the new AlTeO2:Cu doped PVPp-Si MPS SD were reviewed using forward and reverse bias V-I measurements. The thermionic emission TE and Cheung  Cheung functions were employed to ascertain the influences of an additional organic interfacial layer on the comparative outcomes of this research. Thus, some essential electrical attributes such as saturation current Is, ideality factor n, rectification-ratio R.R.IforwardIreverse, barrier height B.H. Φbo, and seriesshunt resistances RsRsh were computed. Furthermore, the density of surface states Nss was acquired from the V-I plots according to the Card  Rhoderick method. The observed experimental results indicated that the TeO2:Cu-PVP inter-layer enhanced the quality of MS type SD as respects obtained low reverse current, Nss, Rs, and high Rsh and R.R. values. All these results indicate that TeO2:Cu-PVP inter-layer can be used successfully instead of conventional insulators for its favored specifications like easy fabrication processes, low cost, and flexibility features.

 The effects of the application of the TeO2:Cu-PVP interface to the Alp-Si MS type SD on the performance of the new AlTeO2:Cu doped PVPp-Si MPS SD were reviewed using forward and reverse bias V-I measurements. The thermionic emission TE and Cheung  Cheung functions were employed to ascertain the influences of an additional organic interfacial layer on the comparative outcomes of this research. Thus, some essential electrical attributes such as saturation current Is, ideality factor n, rectification-ratio R.R.IforwardIreverse, barrier height B.H. Φbo, and seriesshunt resistances RsRsh were computed. Furthermore, the density of surface states Nss was acquired from the V-I plots according to the Card  Rhoderick method. The observed experimental results indicated that the TeO2:Cu-PVP inter-layer enhanced the quality of MS type SD as respects obtained low reverse current, Nss, Rs, and high Rsh and R.R. values. All these results indicate that TeO2:Cu-PVP inter-layer can be used successfully instead of conventional insulators for its favored specifications like easy fabrication processes, low cost, and flexibility features.

Makale detayları

A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Yazarlar:

Çiğdem Ş. Güçlü

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.62-69

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001286706

pISSN:

2147-9542

(TeO2:Cu-doped PVP) Interlayer

On Performance MS MPS Type SDs

Difference Between Calculation Methods

Density of Surface States

(TeO2:Cu-doped PVP) interlayer

On performance MS

MPS type SDs

Difference between calculation methods

Density of surface states

Sayı

Makale detayları

Yazarlar: Çiğdem Ş. Güçlü

Yayıncı: Gazi University

Dergi: Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.62-69

Belge Tipi: Makale

Yayın Tarihi: 3/2023

Belge Dili: İngilizce

Document ID (Org No.): 2001286706

pISSN: 2147-9542

Sayı

Yazarlar:

Çiğdem Ş. Güçlü

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science Part A: Engineering and Innovation Vol.10 Issue 1, pp.62-69

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001286706

pISSN:

2147-9542