Synthesis and Characterization of Cu2ZnSnS4 and Cu2MnSnS4 Thin Films

Canan Aytuğ Ava

Makale detayları

Synthesis and Characterization of Cu2ZnSnS4 and Cu2MnSnS4 Thin Films

Yazarlar:

Canan Aytuğ Ava

Yayıncı:

Afyon Kocatepe University

Ana Başlıklar:

Fotonik | Optoelektronik ve Optik İletişim

Dergi:

Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.25 Issue 2, pp.269-278

Belge Tipi:

Makale

Yayın Tarihi:

11/2025

Belge Dili:

Türkçe

Document ID (Org No.):

2001344399

pISSN:

2149-3367

Anahtar kelimeler:

Özet:

 It is advantageous to use low-cost and easily controlled deposition systems by substituting different metals. In this study, Cu2ZnSnS4 films and Cu2MnSnS4 thin films as an alternative absorber layer were successfully deposited by spin coating method under 240C substrate temperature and annealed under 30 and 40 ccm Ar:H2S flow. In the development of CZTS-based thin-film solar cells, the reduction of antisite defects through cation substitution has attracted great attention. In this review, the effect of using Mn metal instead of Zn is discussed. Theoretically, according to Shockley-Queisser limit values, CZTS has a band gap of 1.52-1.54 eV, while Cu2MnSnS4 CMTS has a band gap of 1.37-1.48 eV and a large absorption coefficient above 104cm-1 in both materials. This makes the CMTS thin film a possible photovoltaic material. Films have direct optical bandgaps. As a result of the structural analysis, the microstructure, strain value, crystal size and dislocation density of the samples were calculated. The films 112 have a preferential growth plane and their structure was observed to be CZTS kesterite and CMTS stannite. The structures, morphologies and optical properties of the prepared Cu2ZnSnS4 and Cu2MnSnS4 films were characterized in detail using XRD, SEM, EDS and UV-Vis measurements.

 It is advantageous to use low-cost and easily controlled deposition systems by substituting different metals. In this study, Cu2ZnSnS4 films and Cu2MnSnS4 thin films as an alternative absorber layer were successfully deposited by spin coating method under 240C substrate temperature and annealed under 30 and 40 ccm Ar:H2S flow. In the development of CZTS-based thin-film solar cells, the reduction of antisite defects through cation substitution has attracted great attention. In this review, the effect of using Mn metal instead of Zn is discussed. Theoretically, according to Shockley-Queisser limit values, CZTS has a band gap of 1.52-1.54 eV, while Cu2MnSnS4 CMTS has a band gap of 1.37-1.48 eV and a large absorption coefficient above 104cm-1 in both materials. This makes the CMTS thin film a possible photovoltaic material. Films have direct optical bandgaps. As a result of the structural analysis, the microstructure, strain value, crystal size and dislocation density of the samples were calculated. The films 112 have a preferential growth plane and their structure was observed to be CZTS kesterite and CMTS stannite. The structures, morphologies and optical properties of the prepared Cu2ZnSnS4 and Cu2MnSnS4 films were characterized in detail using XRD, SEM, EDS and UV-Vis measurements.

 It is advantageous to use low-cost and easily controlled deposition systems by substituting different metals. In this study, Cu2ZnSnS4 films and Cu2MnSnS4 thin films as an alternative absorber layer were successfully deposited by spin coating method under 240C substrate temperature and annealed under 30 and 40 ccm Ar:H2S flow. In the development of CZTS-based thin-film solar cells, the reduction of antisite defects through cation substitution has attracted great attention. In this review, the effect of using Mn metal instead of Zn is discussed. Theoretically, according to Shockley-Queisser limit values, CZTS has a band gap of 1.52-1.54 eV, while Cu2MnSnS4 CMTS has a band gap of 1.37-1.48 eV and a large absorption coefficient above 104cm-1 in both materials. This makes the CMTS thin film a possible photovoltaic material. Films have direct optical bandgaps. As a result of the structural analysis, the microstructure, strain value, crystal size and dislocation density of the samples were calculated. The films 112 have a preferential growth plane and their structure was observed to be CZTS kesterite and CMTS stannite. The structures, morphologies and optical properties of the prepared Cu2ZnSnS4 and Cu2MnSnS4 films were characterized in detail using XRD, SEM, EDS and UV-Vis measurements.

 Farklı metallerin ikamesi ile düşük maliyetli ve kolay kontrollü biriktirme sistemlerinin kullanılması avantaj sağlamaktadır. Bu çalışmada Cu2ZnSnS4 filmleri ve alternatif bir soğurucu katman olarak Cu2MnSnS4 ince filmleri dönel kaplama yöntemiyle 240C alttaş sıcaklığı altında 30 ve 40 ccm Ar:H2S akış altında tavlanarak başarıyla biriktirildi. CZTS tabanlı ince film güneş pillerinin geliştirilmesinde, antisit kusurlarının katyon ikamesi yoluyla azaltılması büyük ilgi görmüştür. Bu incelemede, Zn yerine Mn metalin kullanılmasının etkisi tartışıldı. Teorik olarak Shockley-Queisser sınır değerlerine göre CZTS 1,52-1.54 eV bant aralığına, Cu2MnSnS4 CMTS ise 1.37-1,48 eV bant aralığına ve her iki malzemede 104cm-1 üzerinde büyük bir soğurma katsayısına sahiptir. Bu durum CMTS ince filmini de olası bir fotovoltaik malzeme haline getirir. Filmler doğrudan optik bant aralıklarına sahiptir. Yapısal analiz sonucunda örneklerin mikro yapı, gerinim değeri, kristal büyüklüğü ve dislokasyon yoğunluğu hesaplandı. Filmler 112 tercihli büyüme düzlemine sahip olup yapısı CZTS kesterite, CMTS ise stannite yapıda olduğu görüldü. Hazırlanan Cu2ZnSnS4 ve Cu2MnSnS4 filmlerinin yapıları, morfolojileri ve optik özellikleri XRD, SEM, EDS ve UV-Vis, ölçümleri kullanılarak karakterizasyonu ayrıntılı olarak incelenmiştir.

Makale detayları

Synthesis and Characterization of Cu2ZnSnS4 and Cu2MnSnS4 Thin Films

Yazarlar:

Canan Aytuğ Ava

Yayıncı:

Afyon Kocatepe University

Ana Başlıklar:

Fotonik | Optoelektronik ve Optik İletişim

Dergi:

Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.25 Issue 2, pp.269-278

Belge Tipi:

Makale

Yayın Tarihi:

11/2025

Belge Dili:

Türkçe

Document ID (Org No.):

2001344399

pISSN:

2149-3367

CMTS

Crystal Structure

Thin Film

Spin Coating

OpticsCMTS

Kristal yapı

İnce film

Dönel kaplama

Optik

Sayı

Makale detayları

Yazarlar: Canan Aytuğ Ava

Yayıncı: Afyon Kocatepe University

Ana Başlıklar: Fotonik | Optoelektronik ve Optik İletişim

Dergi: Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.25 Issue 2, pp.269-278

Belge Tipi: Makale

Yayın Tarihi: 11/2025

Belge Dili: Türkçe

Document ID (Org No.): 2001344399

pISSN: 2149-3367

Sayı

Yazarlar:

Canan Aytuğ Ava

Yayıncı:

Afyon Kocatepe University

Ana Başlıklar:

Fotonik | Optoelektronik ve Optik İletişim

Dergi:

Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.25 Issue 2, pp.269-278

Belge Tipi:

Makale

Yayın Tarihi:

11/2025

Belge Dili:

Türkçe

Document ID (Org No.):

2001344399

pISSN:

2149-3367