Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si   substrates

Ömer Lütfi ÜNSAL; Beşire GÖNÜL

Makale detayları

Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Yazarlar:

Ömer Lütfi ÜNSAL | Beşire GÖNÜL

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2017 Vol.41 Issue 4, pp.337-343

Belge Tipi:

Makale

Yayın Tarihi:

7/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000759602

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Özet:

 

A detailed comparative theoretical analysis on both   carrier and photon confinement of dilute nitride direct bandgap   GaNxx_{x}As1−x−y1−x−y_{1-x-y}Pyy_{y} with that of GaAs1−y1−y_{1-y}Pyy_{y} on Si   substrates is presented. Model calculations indicate that optical   confinement factor of GaAs1−y1−y_{1-y}Pyy_{y}/GaP is greater than that of   GaNxx_{x}As1−x−y1−x−y_{1-x-y}Pyy_{y}/GaP for all concentrations. We have   demonstrated that one can improve the optical confinement factor of   GaNxx_{x}As1−x−y1−x−y_{1-x-y}Pyy_{y}/GaP by using an Alzz_{z}Ga1−z1−z_{1-z}P cladding   layer.

Makale detayları

Achieving carrier and photon confinement in Ga(NAsP)/AlGaP/GaP QWs on Si substrates

Yazarlar: Ömer Lütfi ÜNSAL | Beşire GÖNÜL

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2017 Vol.41 Issue 4, pp.337-343

Belge Tipi: Makale

Yayın Tarihi: 7/2017

Belge Dili: Türkçe

Document ID (Org No.): 2000759602

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Sayı

Yazarlar:

Ömer Lütfi ÜNSAL | Beşire GÖNÜL

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2017 Vol.41 Issue 4, pp.337-343

Belge Tipi:

Makale

Yayın Tarihi:

7/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000759602

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101