Gallium Oxide: A Rising Star in The Semiconductor Realm

Matteo BOSİ; Roberto FORNARİ

doi:https://doi.org/10.35378/gujs.647201

Makale detayları

Gallium Oxide: A Rising Star in The Semiconductor Realm

Yazarlar:

Matteo BOSİ | Roberto FORNARİ

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science 2019 Vol.32 Issue 4, pp.1092-1095

Belge Tipi:

Makale

Yayın Tarihi:

11/2019

Belge Dili:

İngilizce

Document ID (Org No.):

2000427886

eISSN:

2147-1762

DOI:

https://doi.org/10.35378/gujs.647201

Özet:

 


A “new” semiconductor can gather the interest of the scientific
community only when it adds unprecedented properties to the ones already
established, with silicon universally considered as the most widespread and the
primary benchmark. In the last decades, this happened for example with III-V
and III-N semiconducting compounds, capable of emitting and absorbing light and
to process signals of much higher frequencies than silicon. More recently, this
newly happened with silicon carbide, which can work at higher voltages and
power than previously available semiconductors, and with layered transition
metal dichalcogenides, for their unusual properties and potential applications
in nanoelectronics.


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Makale detayları

Gallium Oxide: A Rising Star in The Semiconductor Realm

Yazarlar: Matteo BOSİ | Roberto FORNARİ

Yayıncı: Gazi University

Dergi: Gazi University Journal of Science 2019 Vol.32 Issue 4, pp.1092-1095

Belge Tipi: Makale

Yayın Tarihi: 11/2019

Belge Dili: İngilizce

Document ID (Org No.): 2000427886

eISSN: 2147-1762

DOI: https://doi.org/10.35378/gujs.647201

Sayı

Yazarlar:

Matteo BOSİ | Roberto FORNARİ

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science 2019 Vol.32 Issue 4, pp.1092-1095

Belge Tipi:

Makale

Yayın Tarihi:

11/2019

Belge Dili:

İngilizce

Document ID (Org No.):

2000427886

eISSN:

2147-1762

DOI:

https://doi.org/10.35378/gujs.647201