Frequency and Voltage Dependent Properties of Ag/GO-NiO/p-Si/Al Structure at Low Frequencies

Halil Özerli

Makale detayları

Frequency and Voltage Dependent Properties of Ag/GO-NiO/p-Si/Al Structure at Low Frequencies

Yazarlar:

Halil Özerli

Yayıncı:

Osmaniye Korkut Ata Üniversitesi

Ana Başlıklar:

Malzeme Üretim Teknolojileri | Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi:

Osmaniye Korkut Ata Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.6 Issue 3, pp.2034-2045

Belge Tipi:

Makale

Yayın Tarihi:

4/2023

Belge Dili:

Türkçe

Document ID (Org No.):

2001304698

pISSN:

2687-3729

Anahtar kelimeler:

Özet:

 In this study, NiO doped GO thin film was coated on p-type silicon by sol-gel method.The dielectric properties of AgGO-NiOp-SiAl Schottky diode were determined from conductivity-voltage Gω-V measurements and capacitance-voltage C-V measurements in the low frequency of 10 kHz-50 kHz-100 kHz at room temperature and in the dark. The interfacial state densities Nss and series resistances Rs was investigated using of Ag GO-NiO p-SiAl structure were calculated from the experimental results obtained from C-V measurements and Gω-V measurements. It was observed that the values of Nss and Rs decreased with the enhancement of frequency. According to the results, it was seen that the AgGO-NiOp-SiAl structure produced showed diode property. Besides, the dielectric parameters, dielectric constant ε, dielectric loss ε, loss tangent tanδ and AC electrical conductivity σac values of the AgGO-NiOp-SiAl structure were calculated. According to the results, ε, ε, tanδ and σac values decreased with the increment of frequency values at low frequencies. Experimental results showed that ε, ε, tanδ and σacwere strongly dependent on frequency, and all of the results obtained were found to be in agreement with the literature studies.

 In this study, NiO doped GO thin film was coated on p-type silicon by sol-gel method.The dielectric properties of AgGO-NiOp-SiAl Schottky diode were determined from conductivity-voltage Gω-V measurements and capacitance-voltage C-V measurements in the low frequency of 10 kHz-50 kHz-100 kHz at room temperature and in the dark. The interfacial state densities Nss and series resistances Rs was investigated using of Ag GO-NiO p-SiAl structure were calculated from the experimental results obtained from C-V measurements and Gω-V measurements. It was observed that the values of Nss and Rs decreased with the enhancement of frequency. According to the results, it was seen that the AgGO-NiOp-SiAl structure produced showed diode property. Besides, the dielectric parameters, dielectric constant ε, dielectric loss ε, loss tangent tanδ and AC electrical conductivity σac values of the AgGO-NiOp-SiAl structure were calculated. According to the results, ε, ε, tanδ and σac values decreased with the increment of frequency values at low frequencies. Experimental results showed that ε, ε, tanδ and σacwere strongly dependent on frequency, and all of the results obtained were found to be in agreement with the literature studies.

 In this study, NiO doped GO thin film was coated on p-type silicon by sol-gel method.The dielectric properties of AgGO-NiOp-SiAl Schottky diode were determined from conductivity-voltage Gω-V measurements and capacitance-voltage C-V measurements in the low frequency of 10 kHz-50 kHz-100 kHz at room temperature and in the dark. The interfacial state densities Nss and series resistances Rs was investigated using of Ag GO-NiO p-SiAl structure were calculated from the experimental results obtained from C-V measurements and Gω-V measurements. It was observed that the values of Nss and Rs decreased with the enhancement of frequency. According to the results, it was seen that the AgGO-NiOp-SiAl structure produced showed diode property. Besides, the dielectric parameters, dielectric constant ε, dielectric loss ε, loss tangent tanδ and AC electrical conductivity σac values of the AgGO-NiOp-SiAl structure were calculated. According to the results, ε, ε, tanδ and σac values decreased with the increment of frequency values at low frequencies. Experimental results showed that ε, ε, tanδ and σacwere strongly dependent on frequency, and all of the results obtained were found to be in agreement with the literature studies.

 Bu çalışmada, sol-jel yöntemi ile p-tipi silisyum üzerinde NiO katkılı GO ince film kaplanmıştır. AgGO-NiOp-SiAl Schottky diyodunun dielektrik özellikleri oda sıcaklığında ve karanlıkta, 10 kHz-50 kHz-100 kHz düşük frekans aralığında iletkenlik-voltaj Gω-Völçümleri ve kapasitans-voltaj C-V ölçümlerinden yararlanılarak araştırıldı.Gω-V ölçümleri ve C-V ölçümlerinden elde edilen deneysel sonuçlardan, Ag GO-NiOp-SiAl yapısının seri dirençleri Rs ve arayüzey durum yoğunlukları Nss hesaplanmıştır. Artan frekansla Nss ve Rs değerlerinin azaldığı görülmüştür. Çıkan sonuçlara göre elde edilen AgGO-NiOp-SiAl yapısının diyot özelliği gösterdiği görülmüştür. Çıkan sonuçlar göz önüne alınarak AgGO-NiOp-SiAl yapısının dielektrik parametreleri; dielektrik sabiti ε, dielektrik kaybı ε, kayıp tanjantı tanδ ve AC elektrik iletkenliği σac hesaplanmıştır. Sonuçlara göre ε, ε,tanδ ve σac değerleri düşük frekanslarda artan frekansla azalmıştır. Elde edilen bulgular, ε, ε, tanδ ve σacnin frekansa bağlı olduğunu güçlü bir şekilde göstermiştir. Elde edilen sonuçların tamamı literatür çalışmalarıyla uyum içinde olduğu görülmüştür.

Makale detayları

Frequency and Voltage Dependent Properties of Ag/GO-NiO/p-Si/Al Structure at Low Frequencies

Yazarlar:

Halil Özerli

Yayıncı:

Osmaniye Korkut Ata Üniversitesi

Ana Başlıklar:

Malzeme Üretim Teknolojileri | Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi:

Osmaniye Korkut Ata Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.6 Issue 3, pp.2034-2045

Belge Tipi:

Makale

Yayın Tarihi:

4/2023

Belge Dili:

Türkçe

Document ID (Org No.):

2001304698

pISSN:

2687-3729

Schottky diode

GO-NiO

interfacial layerSchottky diyot

GO-NiO

Arayüzey tabakası

Sayı

Makale detayları

Frequency and Voltage Dependent Properties of Ag/GO-NiO/p-Si/Al Structure at Low Frequencies

Yazarlar: Halil Özerli

Yayıncı: Osmaniye Korkut Ata Üniversitesi

Ana Başlıklar: Malzeme Üretim Teknolojileri | Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi: Osmaniye Korkut Ata Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.6 Issue 3, pp.2034-2045

Belge Tipi: Makale

Yayın Tarihi: 4/2023

Belge Dili: Türkçe

Document ID (Org No.): 2001304698

pISSN: 2687-3729

Schottky diode

GO-NiO

interfacial layerSchottky diyot

GO-NiO

Arayüzey tabakası

Sayı

Yazarlar:

Halil Özerli

Yayıncı:

Osmaniye Korkut Ata Üniversitesi

Ana Başlıklar:

Malzeme Üretim Teknolojileri | Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi:

Osmaniye Korkut Ata Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.6 Issue 3, pp.2034-2045

Belge Tipi:

Makale

Yayın Tarihi:

4/2023

Belge Dili:

Türkçe

Document ID (Org No.):

2001304698

pISSN:

2687-3729