Aynı Şartlarda Hazırlanmış Al/Bi3Ti4O12/n-Si (MFS) diyotların (60 Adet) Engel Yükseklikleri İle İdealite Faktörlerindeki Dağılım

Hayriye Gökçen ÇETİNKAYA

Makale detayları

Aynı Şartlarda Hazırlanmış Al/Bi3Ti4O12/n-Si (MFS) diyotların (60 Adet) Engel Yükseklikleri İle İdealite Faktörlerindeki Dağılım

Yazarlar:

Hayriye Gökçen ÇETİNKAYA

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science Part C: Design and Technology 2017 Vol.5 Issue 3, pp.89-96

Belge Tipi:

Makale

Yayın Tarihi:

9/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000431720

eISSN:

2147-9526

Özet:

 


In this study, the values of barrier heights and ideality factors of identically fabricated Au/BTO/n-

Si (MFS) type SBDs (60 dots) have been obtained from their intercepts and slopes linear parts of

forward bias lnI vs V plots at room temperature. Experimental results show that these two

important parameters (BH and n) of the diodes change from diode to diode even if they are

identically prepared on same quarter n-Si wafer. These results are clearly important to understand

the physical origin of such non-ideal behavior so that it can be controlled in future such device

applications. High values of n can be attributed to the existence of a wide distribution of low

Schottky barrier height (SBH) patches, interfacial BTO layer and surface states. According to us,

the BH differences over the contact area are a result of inhomogeneity interfacial layer thickness

or composition and BH between metal, grain boundaries and semiconductor and non-uniformity

of the interfacial charges or dislocations.

.

Makale detayları

Aynı Şartlarda Hazırlanmış Al/Bi3Ti4O12/n-Si (MFS) diyotların (60 Adet) Engel Yükseklikleri İle İdealite Faktörlerindeki Dağılım

Yazarlar: Hayriye Gökçen ÇETİNKAYA

Yayıncı: Gazi University

Dergi: Gazi University Journal of Science Part C: Design and Technology 2017 Vol.5 Issue 3, pp.89-96

Belge Tipi: Makale

Yayın Tarihi: 9/2017

Belge Dili: Türkçe

Document ID (Org No.): 2000431720

eISSN: 2147-9526

Sayı

Yazarlar:

Hayriye Gökçen ÇETİNKAYA

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science Part C: Design and Technology 2017 Vol.5 Issue 3, pp.89-96

Belge Tipi:

Makale

Yayın Tarihi:

9/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000431720

eISSN:

2147-9526