Growth Mechanism and Some Properties of Cd1-xMnx Se Semimagnetic Semiconductor Thin Films

V. S. KARANDE; S. H. MANE; V. B. PUJARI and L. P. DESHMUKH

Makale detayları

Growth Mechanism and Some Properties of Cd1-xMnx Se Semimagnetic Semiconductor Thin Films

Yazarlar:

V. S. KARANDE | S. H. MANE | V. B. PUJARI and L. P. DESHMUKH

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2003 Vol.27 Issue 6, pp.559-568

Belge Tipi:

Makale

Yayın Tarihi:

5/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761830

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

(Cd, Mn) Se dilute semiconductor or semimagnetic  semiconductors have recently became the focus of intense research due  to their interesting combination of magnetic and semiconducting  properties, and are employed in a variety of devices including solar  cells, gas sensors etc.  A series of thin films of this material,  Cd1 - xMnxSe (0 \le x \le 0.5), were therefore synthesized onto  precleaned amorphous glass substrates using a solution growth  technique.  The sources of cadmium (Cd2+) and manganese (Mn2+)  were aqueous solutions of cadmium sulphate and manganese sulphate, and  selenium (Se2-) was extracted from a reflux of sodium  selenosulphite.  The different deposition parameters such as  temperature, time of deposition, speed of mechanical churning, pH of  the reaction mixture etc were optimized to yield good quality  deposits.  The as-grown samples were thin, relatively uniform, smooth  and tightly adherent to the substrate support.  The colour of the  deposits changed from deep red-orange to yellowish-orange as the  composition parameter, x, was varied from 0 to 0.5.  The terminal  layer thickness decreased with increasing value of, x.  The optical  energy gap decreased from 1.84 eV to 1.34 eV for the chang e of x from  0 to 0.5.  The coefficient of optical absorption a is of the  order of 104 - 105 cm-1 and the type of transition (m \cong 0.5)  is of the band-to-band direct type.  The dc electrical conductivities  were measured at room temperature and in the temperature range 300 K -  500 K. It was observed that the room temperature electrical  conductivity increased with the composition parameter x up to 0.1,  gradually decreasing thereafter.  The thermo power measurements showed  n-type conduction in these films.

 

(Cd, Mn) Se dilute semiconductor or semimagnetic  semiconductors have recently became the focus of intense research due  to their interesting combination of magnetic and semiconducting  properties, and are employed in a variety of devices including solar  cells, gas sensors etc.  A series of thin films of this material,  Cd1 - xMnxSe (0 \le x \le 0.5), were therefore synthesized onto  precleaned amorphous glass substrates using a solution growth  technique.  The sources of cadmium (Cd2+) and manganese (Mn2+)  were aqueous solutions of cadmium sulphate and manganese sulphate, and  selenium (Se2-) was extracted from a reflux of sodium  selenosulphite.  The different deposition parameters such as  temperature, time of deposition, speed of mechanical churning, pH of  the reaction mixture etc were optimized to yield good quality  deposits.  The as-grown samples were thin, relatively uniform, smooth  and tightly adherent to the substrate support.  The colour of the  deposits changed from deep red-orange to yellowish-orange as the  composition parameter, x, was varied from 0 to 0.5.  The terminal  layer thickness decreased with increasing value of, x.  The optical  energy gap decreased from 1.84 eV to 1.34 eV for the chang e of x from  0 to 0.5.  The coefficient of optical absorption a is of the  order of 104 - 105 cm-1 and the type of transition (m \cong 0.5)  is of the band-to-band direct type.  The dc electrical conductivities  were measured at room temperature and in the temperature range 300 K -  500 K. It was observed that the room temperature electrical  conductivity increased with the composition parameter x up to 0.1,  gradually decreasing thereafter.  The thermo power measurements showed  n-type conduction in these films.

Makale detayları

Growth Mechanism and Some Properties of Cd1-xMnx Se Semimagnetic Semiconductor Thin Films

Yazarlar:

V. S. KARANDE | S. H. MANE | V. B. PUJARI and L. P. DESHMUKH

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2003 Vol.27 Issue 6, pp.559-568

Belge Tipi:

Makale

Yayın Tarihi:

5/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761830

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Dilute semiconductor

reflux.

Sayı

Makale detayları

Growth Mechanism and Some Properties of Cd1-xMnx Se Semimagnetic Semiconductor Thin Films

Yazarlar: V. S. KARANDE | S. H. MANE | V. B. PUJARI and L. P. DESHMUKH

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2003 Vol.27 Issue 6, pp.559-568

Belge Tipi: Makale

Yayın Tarihi: 5/2003

Belge Dili: Türkçe

Document ID (Org No.): 2000761830

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Dilute semiconductor

reflux.

Sayı

Yazarlar:

V. S. KARANDE | S. H. MANE | V. B. PUJARI and L. P. DESHMUKH

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2003 Vol.27 Issue 6, pp.559-568

Belge Tipi:

Makale

Yayın Tarihi:

5/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761830

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101