Investigation of The Effect of Electron Irradiation on Al-Omic/Graphene (F3O4) Device

Yılmaz Şahin

Makale detayları

Investigation of The Effect of Electron Irradiation on Al-Omic/Graphene (F3O4) Device

Yazarlar:

Yılmaz Şahin

Yayıncı:

Ataturk University

Ana Başlıklar:

Primary Health Care

Dergi:

Journal of Basic Health Vol.2 Issue 1, pp.1-7

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001286590

pISSN:

2980-2504

Anahtar kelimeler:

Özet:

 This study reports the electrical properties of Al-omicGraphene F3O4 devices due to electron radiation. The sample was exposed to 9, 12 and 15 MeV electron irradiations. The sample was exposed to the same radiation dose at different energies. It was observed that the experimental ideality factor also increased with increasing energy levels. It was observed that the I-V curves were distorted. Here, the distortion of the I-V curves is attributed to the change in the devices surface or interface state distribution. Some basic diode parameters such as ideality factor n, barrier height Fb and series resistance Rs were calculated from I-V measurements using of Thermionic Emission and Cheung function. The increase in series resistance by electron radiation irradiation was attributed to the decrease in active doping densities.

 This study reports the electrical properties of Al-omicGraphene F3O4 devices due to electron radiation. The sample was exposed to 9, 12 and 15 MeV electron irradiations. The sample was exposed to the same radiation dose at different energies. It was observed that the experimental ideality factor also increased with increasing energy levels. It was observed that the I-V curves were distorted. Here, the distortion of the I-V curves is attributed to the change in the devices surface or interface state distribution. Some basic diode parameters such as ideality factor n, barrier height Fb and series resistance Rs were calculated from I-V measurements using of Thermionic Emission and Cheung function. The increase in series resistance by electron radiation irradiation was attributed to the decrease in active doping densities.

 This study reports the electrical properties of Al-omicGraphene F3O4 devices due to electron radiation. The sample was exposed to 9, 12 and 15 MeV electron irradiations. The sample was exposed to the same radiation dose at different energies. It was observed that the experimental ideality factor also increased with increasing energy levels. It was observed that the I-V curves were distorted. Here, the distortion of the I-V curves is attributed to the change in the devices surface or interface state distribution. Some basic diode parameters such as ideality factor n, barrier height Fb and series resistance Rs were calculated from I-V measurements using of Thermionic Emission and Cheung function. The increase in series resistance by electron radiation irradiation was attributed to the decrease in active doping densities.

 This study reports the electrical properties of Al-omicGraphene F3O4 devices due to electron radiation. The sample was exposed to 9, 12 and 15 MeV electron irradiations. The sample was exposed to the same radiation dose at different energies. It was observed that the experimental ideality factor also increased with increasing energy levels. It was observed that the I-V curves were distorted. Here, the distortion of the I-V curves is attributed to the change in the devices surface or interface state distribution. Some basic diode parameters such as ideality factor n, barrier height Fb and series resistance Rs were calculated from I-V measurements using of Thermionic Emission and Cheung function. The increase in series resistance by electron radiation irradiation was attributed to the decrease in active doping densities.

Makale detayları

Investigation of The Effect of Electron Irradiation on Al-Omic/Graphene (F3O4) Device

Yazarlar:

Yılmaz Şahin

Yayıncı:

Ataturk University

Ana Başlıklar:

Primary Health Care

Dergi:

Journal of Basic Health Vol.2 Issue 1, pp.1-7

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001286590

pISSN:

2980-2504

Electron

İrradiation

Effect

Diode

Sayı

Makale detayları

Investigation of The Effect of Electron Irradiation on Al-Omic/Graphene (F3O4) Device

Yazarlar: Yılmaz Şahin

Yayıncı: Ataturk University

Ana Başlıklar: Primary Health Care

Dergi: Journal of Basic Health Vol.2 Issue 1, pp.1-7

Belge Tipi: Makale

Yayın Tarihi: 3/2023

Belge Dili: İngilizce

Document ID (Org No.): 2001286590

pISSN: 2980-2504

Electron

İrradiation

Effect

Diode

Sayı

Yazarlar:

Yılmaz Şahin

Yayıncı:

Ataturk University

Ana Başlıklar:

Primary Health Care

Dergi:

Journal of Basic Health Vol.2 Issue 1, pp.1-7

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001286590

pISSN:

2980-2504