Fabrication and Electrical Characterization of Cu1-xCrxO/n-Si Diodes by Sol Gel Spin Coating Method

Şeyhmus Toprak; Şerif Rüzgar

Makale detayları

Fabrication and Electrical Characterization of Cu1-xCrxO/n-Si Diodes by Sol Gel Spin Coating Method

Yazarlar:

Şeyhmus Toprak | Şerif Rüzgar

Yayıncı:

Igdir University

Ana Başlıklar:

Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi:

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.13 Issue 3, pp.1713-1723

Belge Tipi:

Makale

Yayın Tarihi:

1/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001293801

pISSN:

2536-4618

Anahtar kelimeler:

Özet:

 Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of AgCu1-xCrxOn-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark  characteristics. The crucial junction parameters such as series resistance R, rectification ratio , ideality factor  and barrier height Φ were calculated by using  data. The calculated values for the ideality factor n, which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest  value was obtained from Cu0.5Cr0.5On-Si diode. In addition, the capacitance-voltage  characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The 2 graphs were employed to calculate the values of , , , and Φ . The results show that the electrical properties of AgCu1-xCrxOn-Si diodes can be controlled by various chromium doping concentration.

 Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of AgCu1-xCrxOn-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark  characteristics. The crucial junction parameters such as series resistance R, rectification ratio , ideality factor  and barrier height Φ were calculated by using  data. The calculated values for the ideality factor n, which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest  value was obtained from Cu0.5Cr0.5On-Si diode. In addition, the capacitance-voltage  characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The 2 graphs were employed to calculate the values of , , , and Φ . The results show that the electrical properties of AgCu1-xCrxOn-Si diodes can be controlled by various chromium doping concentration.

 Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of AgCu1-xCrxOn-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark  characteristics. The crucial junction parameters such as series resistance R, rectification ratio , ideality factor  and barrier height Φ were calculated by using  data. The calculated values for the ideality factor n, which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest  value was obtained from Cu0.5Cr0.5On-Si diode. In addition, the capacitance-voltage  characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The 2 graphs were employed to calculate the values of , , , and Φ . The results show that the electrical properties of AgCu1-xCrxOn-Si diodes can be controlled by various chromium doping concentration.

 Undoped and Cr-doped CuO thin films were deposited on n-Si substrates by sol gel spin coating method. These electrical properties of copper oxide-based heterojunction structures were examined as a function of Cr doping concentrations. The results show that a change in Cr concentration significantly affects the electrical properties of AgCu1-xCrxOn-Si diodes. The all diodes exhibit rectification behavior, as shown by their dark  characteristics. The crucial junction parameters such as series resistance R, rectification ratio , ideality factor  and barrier height Φ were calculated by using  data. The calculated values for the ideality factor n, which offered details about the performance of the diodes, range from 2.16 to 2.78. The highest  value was obtained from Cu0.5Cr0.5On-Si diode. In addition, the capacitance-voltage  characteristics of the diodes were measured in the frequency range of 10 kHz and 1 MHz. The 2 graphs were employed to calculate the values of , , , and Φ . The results show that the electrical properties of AgCu1-xCrxOn-Si diodes can be controlled by various chromium doping concentration.

Makale detayları

Fabrication and Electrical Characterization of Cu1-xCrxO/n-Si Diodes by Sol Gel Spin Coating Method

Yazarlar:

Şeyhmus Toprak | Şerif Rüzgar

Yayıncı:

Igdir University

Ana Başlıklar:

Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi:

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.13 Issue 3, pp.1713-1723

Belge Tipi:

Makale

Yayın Tarihi:

1/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001293801

pISSN:

2536-4618

Sol gel method

Thin Films

Diode

Electrical Properties

Sayı

Makale detayları

Fabrication and Electrical Characterization of Cu1-xCrxO/n-Si Diodes by Sol Gel Spin Coating Method

Yazarlar: Şeyhmus Toprak | Şerif Rüzgar

Yayıncı: Igdir University

Ana Başlıklar: Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi: Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.13 Issue 3, pp.1713-1723

Belge Tipi: Makale

Yayın Tarihi: 1/2023

Belge Dili: İngilizce

Document ID (Org No.): 2001293801

pISSN: 2536-4618

Sol gel method

Thin Films

Diode

Electrical Properties

Sayı

Yazarlar:

Şeyhmus Toprak | Şerif Rüzgar

Yayıncı:

Igdir University

Ana Başlıklar:

Metroloji | Uygulamalı ve Endüstriyel Fizik

Dergi:

Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi Vol.13 Issue 3, pp.1713-1723

Belge Tipi:

Makale

Yayın Tarihi:

1/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001293801

pISSN:

2536-4618