An analytical model to assess DC characteristics of independent gate Si FinFETs

Umer Farooq AHMED; Muhammad Mansoor AHMED

Makale detayları

An analytical model to assess DC characteristics of independent gate Si FinFETs

Yazarlar:

Umer Farooq AHMED | Muhammad Mansoor AHMED

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2019 Vol.27 Issue 4, pp.2456-2465

Belge Tipi:

Makale

Yayın Tarihi:

7/2019

Belge Dili:

İngilizce

Document ID (Org No.):

2000733760

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632

Özet:

 

In this paper, Poisson's  equation is utilized to find the potential distribution inside the channel of an  independent gate FinFET device by adding the effect of channel height. The channel height of the device plays an important role in surface potential calculation when top gate voltage is applied. Using surface potential, an I - V model is developed, which can find the device current both in linear and saturation regions of operation. The model is tested on devices of different dimensions and good agreement between modeled and simulated results is observed, which validates the authenticity of the proposed model.

Makale detayları

An analytical model to assess DC characteristics of independent gate Si FinFETs

Yazarlar: Umer Farooq AHMED | Muhammad Mansoor AHMED

Yayıncı: TUBITAK

Dergi: Turkish Journal of Electrical Engineering and Computer Science 2019 Vol.27 Issue 4, pp.2456-2465

Belge Tipi: Makale

Yayın Tarihi: 7/2019

Belge Dili: İngilizce

Document ID (Org No.): 2000733760

Sıklık: İki Aylık

eISSN: 1303-6203

pISSN: 1300-0632

Sayı

Yazarlar:

Umer Farooq AHMED | Muhammad Mansoor AHMED

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2019 Vol.27 Issue 4, pp.2456-2465

Belge Tipi:

Makale

Yayın Tarihi:

7/2019

Belge Dili:

İngilizce

Document ID (Org No.):

2000733760

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632