Device application of GO: Ag nanoparticles produced by bacterial synthesis method

Fatih Serçeoğlu; Tuba Çakıcı Can; Murat Özdal

Makale detayları

Device application of GO: Ag nanoparticles produced by bacterial synthesis method

Yazarlar:

Fatih Serçeoğlu | Tuba Çakıcı Can | Murat Özdal

Yayıncı:

Ataturk University

Ana Başlıklar:

Nanoelectronics

Dergi:

NanoEra Vol.4 Issue 2, pp.60-63

Belge Tipi:

Makale

Yayın Tarihi:

12/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001334267

pISSN:

2792-0666

Anahtar kelimeler:

Özet:

 In recent years, the bacterial synthesis method for nanoparticle production has gained significant attention in research due to its advantages over physical and chemical techniques. In this study, silver-doped graphene oxide GO nanoparticles were simultaneously reduced in composite form in a bacterial culture medium. The bacterial synthesis method simultaneously reduced the silver Ag-doped graphene oxide GO: Ag nanoparticles. The size and shape of the reduced GO:Ag nanoparticles were determined using advanced spectroscopic imaging techniques. Transmission electron microscopy TEM images of GO: Ag nanoparticles have reported their approximate dimensions to be around 30-70 nm. Thin films were created by spreading GO:Ag nanoparticles onto glass and p-Si surfaces and drying them at 350 C. The optical, structural, and electronic properties of these thin films were investigated. The energy band gap value of the film was estimated as 0.75 eV employing the doublebeam UV-Vis spectrophotometer technique to reveal its optical properties. The given value suggests the generation of an electron-rich thin film with a narrow energy band gap. X-ray diffraction XRD and Raman techniques were used to explore the structural properties of a GO:Ag semiconductor thin film. The Raman technique yielded peak values for the GO:Ag structure, specifically in the D and G band energy values, at 1348 and 1568 cm-1 . Rectifying contacts with a diameter of 1 micrometer were made using Ag metal on this film structure. The current-voltage characteristics of the AgGO: Agp-SiAg structure made after these contacts were investigated.

 In recent years, the bacterial synthesis method for nanoparticle production has gained significant attention in research due to its advantages over physical and chemical techniques. In this study, silver-doped graphene oxide GO nanoparticles were simultaneously reduced in composite form in a bacterial culture medium. The bacterial synthesis method simultaneously reduced the silver Ag-doped graphene oxide GO: Ag nanoparticles. The size and shape of the reduced GO:Ag nanoparticles were determined using advanced spectroscopic imaging techniques. Transmission electron microscopy TEM images of GO: Ag nanoparticles have reported their approximate dimensions to be around 30-70 nm. Thin films were created by spreading GO:Ag nanoparticles onto glass and p-Si surfaces and drying them at 350 C. The optical, structural, and electronic properties of these thin films were investigated. The energy band gap value of the film was estimated as 0.75 eV employing the doublebeam UV-Vis spectrophotometer technique to reveal its optical properties. The given value suggests the generation of an electron-rich thin film with a narrow energy band gap. X-ray diffraction XRD and Raman techniques were used to explore the structural properties of a GO:Ag semiconductor thin film. The Raman technique yielded peak values for the GO:Ag structure, specifically in the D and G band energy values, at 1348 and 1568 cm-1 . Rectifying contacts with a diameter of 1 micrometer were made using Ag metal on this film structure. The current-voltage characteristics of the AgGO: Agp-SiAg structure made after these contacts were investigated.

 In recent years, the bacterial synthesis method for nanoparticle production has gained significant attention in research due to its advantages over physical and chemical techniques. In this study, silver-doped graphene oxide GO nanoparticles were simultaneously reduced in composite form in a bacterial culture medium. The bacterial synthesis method simultaneously reduced the silver Ag-doped graphene oxide GO: Ag nanoparticles. The size and shape of the reduced GO:Ag nanoparticles were determined using advanced spectroscopic imaging techniques. Transmission electron microscopy TEM images of GO: Ag nanoparticles have reported their approximate dimensions to be around 30-70 nm. Thin films were created by spreading GO:Ag nanoparticles onto glass and p-Si surfaces and drying them at 350 C. The optical, structural, and electronic properties of these thin films were investigated. The energy band gap value of the film was estimated as 0.75 eV employing the doublebeam UV-Vis spectrophotometer technique to reveal its optical properties. The given value suggests the generation of an electron-rich thin film with a narrow energy band gap. X-ray diffraction XRD and Raman techniques were used to explore the structural properties of a GO:Ag semiconductor thin film. The Raman technique yielded peak values for the GO:Ag structure, specifically in the D and G band energy values, at 1348 and 1568 cm-1 . Rectifying contacts with a diameter of 1 micrometer were made using Ag metal on this film structure. The current-voltage characteristics of the AgGO: Agp-SiAg structure made after these contacts were investigated.

 In recent years, the bacterial synthesis method for nanoparticle production has gained significant attention in research due to its advantages over physical and chemical techniques. In this study, silver-doped graphene oxide GO nanoparticles were simultaneously reduced in composite form in a bacterial culture medium. The bacterial synthesis method simultaneously reduced the silver Ag-doped graphene oxide GO: Ag nanoparticles. The size and shape of the reduced GO:Ag nanoparticles were determined using advanced spectroscopic imaging techniques. Transmission electron microscopy TEM images of GO: Ag nanoparticles have reported their approximate dimensions to be around 30-70 nm. Thin films were created by spreading GO:Ag nanoparticles onto glass and p-Si surfaces and drying them at 350 C. The optical, structural, and electronic properties of these thin films were investigated. The energy band gap value of the film was estimated as 0.75 eV employing the doublebeam UV-Vis spectrophotometer technique to reveal its optical properties. The given value suggests the generation of an electron-rich thin film with a narrow energy band gap. X-ray diffraction XRD and Raman techniques were used to explore the structural properties of a GO:Ag semiconductor thin film. The Raman technique yielded peak values for the GO:Ag structure, specifically in the D and G band energy values, at 1348 and 1568 cm-1 . Rectifying contacts with a diameter of 1 micrometer were made using Ag metal on this film structure. The current-voltage characteristics of the AgGO: Agp-SiAg structure made after these contacts were investigated.

Makale detayları

Device application of GO: Ag nanoparticles produced by bacterial synthesis method

Yazarlar:

Fatih Serçeoğlu | Tuba Çakıcı Can | Murat Özdal

Yayıncı:

Ataturk University

Ana Başlıklar:

Nanoelectronics

Dergi:

NanoEra Vol.4 Issue 2, pp.60-63

Belge Tipi:

Makale

Yayın Tarihi:

12/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001334267

pISSN:

2792-0666

: Graphene oxide

Ag Nanoparticles

Bacterial Synthesis

Current-Voltage

Sayı

Makale detayları

Device application of GO: Ag nanoparticles produced by bacterial synthesis method

Yazarlar: Fatih Serçeoğlu | Tuba Çakıcı Can | Murat Özdal

Yayıncı: Ataturk University

Ana Başlıklar: Nanoelectronics

Dergi: NanoEra Vol.4 Issue 2, pp.60-63

Belge Tipi: Makale

Yayın Tarihi: 12/2024

Belge Dili: İngilizce

Document ID (Org No.): 2001334267

pISSN: 2792-0666

: Graphene oxide

Ag Nanoparticles

Bacterial Synthesis

Current-Voltage

Sayı

Yazarlar:

Fatih Serçeoğlu | Tuba Çakıcı Can | Murat Özdal

Yayıncı:

Ataturk University

Ana Başlıklar:

Nanoelectronics

Dergi:

NanoEra Vol.4 Issue 2, pp.60-63

Belge Tipi:

Makale

Yayın Tarihi:

12/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001334267

pISSN:

2792-0666