Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS   technology

RAMIN RAJAEI; BAHAR ASGARI; MAHMOUD TABANDEH; MAHDI FAZELI

Makale detayları

Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology

Yazarlar:

RAMIN RAJAEI | BAHAR ASGARI | MAHMOUD TABANDEH | MAHDI FAZELI

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2017 Vol.25 Issue 2, pp.1035-1047

Belge Tipi:

Makale

Yayın Tarihi:

3/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000741041

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632

Özet:

 

In this article, two soft error tolerant SRAM cells, the so-called RATF1 and   RATF2, are proposed and evaluated. The proposed radiation hardened SRAM   cells are capable of fully tolerating single event upsets (SEUs). Moreover,   they show a high degree of robustness against single event multiple upsets   (SEMUs). Over the previous SRAM cells, RATF1 and RATF2 offer lower area and   power overhead. The Hspice simulation results through comparison with some   prominent and state-of-the-art soft error tolerant SRAM cells show that our   proposed robust SRAM cells have smaller area overhead (RAFT1 offers 58%  smaller area than DICE), lower power delay product (RATF1 offers 231.33%   and RATF2 offers 74.75% lower PDP compared with DICE), much more soft   error robustness, and larger noise margins.

Makale detayları

Single event multiple upset-tolerant SRAM cell designs for nano-scale CMOS technology

Yazarlar: RAMIN RAJAEI | BAHAR ASGARI | MAHMOUD TABANDEH | MAHDI FAZELI

Yayıncı: TUBITAK

Dergi: Turkish Journal of Electrical Engineering and Computer Science 2017 Vol.25 Issue 2, pp.1035-1047

Belge Tipi: Makale

Yayın Tarihi: 3/2017

Belge Dili: Türkçe

Document ID (Org No.): 2000741041

Sıklık: İki Aylık

eISSN: 1303-6203

pISSN: 1300-0632

Sayı

Yazarlar:

RAMIN RAJAEI | BAHAR ASGARI | MAHMOUD TABANDEH | MAHDI FAZELI

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2017 Vol.25 Issue 2, pp.1035-1047

Belge Tipi:

Makale

Yayın Tarihi:

3/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000741041

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632