Effects of Substrate Temperature on Properties of a-SiNx:H Films

Tayyar Güngör  And Hüseyin TOLUNAY

Makale detayları

Effects of Substrate Temperature on Properties of a-SiNx:H Films

Yazarlar:

Tayyar Güngör And Hüseyin TOLUNAY

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2002 Vol.26 Issue 4, pp.269-276

Belge Tipi:

Makale

Yayın Tarihi:

3/2002

Belge Dili:

Türkçe

Document ID (Org No.):

2000762131

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap.

Özet:

 

Hydrogenated amorphous silicon nitride films were prepared in an  rf glow-discharge system by the decomposition of silane + nitrogen gas  mixture at various substrate temperatures. The effects of  substrate temperature on the electrical and optical properties of  the films have been studied.

 

Hydrogenated amorphous silicon nitride films were prepared in an  rf glow-discharge system by the decomposition of silane + nitrogen gas  mixture at various substrate temperatures. The effects of  substrate temperature on the electrical and optical properties of  the films have been studied.

Makale detayları

Effects of Substrate Temperature on Properties of a-SiNx:H Films

Yazarlar: Tayyar Güngör And Hüseyin TOLUNAY

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2002 Vol.26 Issue 4, pp.269-276

Belge Tipi: Makale

Yayın Tarihi: 3/2002

Belge Dili: Türkçe

Document ID (Org No.): 2000762131

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

A. Hydrogenated amorphous silicon nitride; B. Substrate temperature; C. Dark conductivity; D. Photoconductivity; E. Optical gap.

Sayı

Yazarlar:

Tayyar Güngör And Hüseyin TOLUNAY

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2002 Vol.26 Issue 4, pp.269-276

Belge Tipi:

Makale

Yayın Tarihi:

3/2002

Belge Dili:

Türkçe

Document ID (Org No.):

2000762131

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101