An efficient structure for T-CNTFETs with intrinsic-n-doped impurity   distribution pattern in drain region

Ali NADERI; Maryam GHODRATI

Makale detayları

An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region

Yazarlar:

Ali NADERI | Maryam GHODRATI

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2018 Vol.26 Issue 5, pp.2335-2346

Belge Tipi:

Makale

Yayın Tarihi:

9/2018

Belge Dili:

Türkçe

Document ID (Org No.):

2000734714

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632

Özet:

 

In this paper, by using impurity distribution engineering   of drain region, an efficient structure is proposed for tunneling carbon   nanotube field-effect transistors (T-CNTFETs). The drain region of the   proposed structure consists of two parts. The impurity density of the part   close to the channel is intrinsic and the other is n-type with constant   density of 1 nm−1−1^{-1}. In conventional T-CNTFETs, heavily doped drain   causes a spiky drop of potential energy around the channel to drain junction   resulting in a pathway for carriers in the valence band to tunnel to the   conduction band which means ambipolar behavior and large leakage current.   The proposed structure expands the longitudinal distance between the bands   at this junction and reduces the band-to-band tunneling (BTBT) and improves   leakage current and ambipolar behavior. Moreover, current ratio, delay time,   power delay product, cut-off frequency, and subthreshold swing as important   characteristics are enhanced so that the proposed structure can be more   attractive for circuit designers. Also, design considerations for intrinsic   region length were done and mentioned. To simulate the devices,   self-consistent solution of Schrodinger and Poisson equations and   nonequilibrium Green's Function method were employed.

Makale detayları

An efficient structure for T-CNTFETs with intrinsic-n-doped impurity distribution pattern in drain region

Yazarlar: Ali NADERI | Maryam GHODRATI

Yayıncı: TUBITAK

Dergi: Turkish Journal of Electrical Engineering and Computer Science 2018 Vol.26 Issue 5, pp.2335-2346

Belge Tipi: Makale

Yayın Tarihi: 9/2018

Belge Dili: Türkçe

Document ID (Org No.): 2000734714

Sıklık: İki Aylık

eISSN: 1303-6203

pISSN: 1300-0632

Sayı

Yazarlar:

Ali NADERI | Maryam GHODRATI

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2018 Vol.26 Issue 5, pp.2335-2346

Belge Tipi:

Makale

Yayın Tarihi:

9/2018

Belge Dili:

Türkçe

Document ID (Org No.):

2000734714

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632