Determination of Defect Distribution in a Ga-rich ZnO/CdS/Cu(In,Ga)Se2 Solar Cell by Admittance Spectroscopy

Habibe BAYHAN

Makale detayları

Determination of Defect Distribution in a Ga-rich ZnO/CdS/Cu(In,Ga)Se2 Solar Cell by Admittance Spectroscopy

Yazarlar:

Habibe BAYHAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2005 Vol.29 Issue 1, pp.17-24

Belge Tipi:

Makale

Yayın Tarihi:

12/2004

Belge Dili:

Türkçe

Document ID (Org No.):

2000761601

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

This article presents a study on the energy distribution of  defects in efficient thin film ZnO/CdS/Cu(In,Ga)Se2 heterojunction  solar cell by the use of admittance spectroscopy.  The capacitance  spectra of the device has been analyzed using a model based on the  existence of a homogeneous distribution of bulk acceptors in the  absorber Cu(In,Ga)Se2 layer.  This model reveals an emission from a  distribution of hole traps centered at an activation energy of about  300 meV with a defect density of 1.2 \times 1017 eV-1 cm-3.   The band gap of the absorber layer is estimated to be about 1.46 eV  which corresponds to a Ga content of about x \approx 0.7 with x the  ratio Ga/(Ga+In).

 

This article presents a study on the energy distribution of  defects in efficient thin film ZnO/CdS/Cu(In,Ga)Se2 heterojunction  solar cell by the use of admittance spectroscopy.  The capacitance  spectra of the device has been analyzed using a model based on the  existence of a homogeneous distribution of bulk acceptors in the  absorber Cu(In,Ga)Se2 layer.  This model reveals an emission from a  distribution of hole traps centered at an activation energy of about  300 meV with a defect density of 1.2 \times 1017 eV-1 cm-3.   The band gap of the absorber layer is estimated to be about 1.46 eV  which corresponds to a Ga content of about x \approx 0.7 with x the  ratio Ga/(Ga+In).

Makale detayları

Determination of Defect Distribution in a Ga-rich ZnO/CdS/Cu(In,Ga)Se2 Solar Cell by Admittance Spectroscopy

Yazarlar:

Habibe BAYHAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2005 Vol.29 Issue 1, pp.17-24

Belge Tipi:

Makale

Yayın Tarihi:

12/2004

Belge Dili:

Türkçe

Document ID (Org No.):

2000761601

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

CIGS

solar cell

admittance spectroscopy

defect distribution.

Sayı

Makale detayları

Determination of Defect Distribution in a Ga-rich ZnO/CdS/Cu(In,Ga)Se2 Solar Cell by Admittance Spectroscopy

Yazarlar: Habibe BAYHAN

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2005 Vol.29 Issue 1, pp.17-24

Belge Tipi: Makale

Yayın Tarihi: 12/2004

Belge Dili: Türkçe

Document ID (Org No.): 2000761601

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

CIGS

solar cell

admittance spectroscopy

defect distribution.

Sayı

Yazarlar:

Habibe BAYHAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2005 Vol.29 Issue 1, pp.17-24

Belge Tipi:

Makale

Yayın Tarihi:

12/2004

Belge Dili:

Türkçe

Document ID (Org No.):

2000761601

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101