ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Mehmet KASAP; Selim ACAR; Bora ALKAN

Makale detayları

ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Yazarlar:

Mehmet KASAP | Selim ACAR | Bora ALKAN

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science 2004 Vol.17 Issue 1, pp.31-35

Belge Tipi:

Makale

Yayın Tarihi:

8/2010

Belge Dili:

İngilizce

Document ID (Org No.):

2000430369

eISSN:

2147-1762

Özet:

 

   

To explain the behavior of Hall mobility versus temperature T behavior in In0.51Ga0.49As and In0.60Ga0.40As detailed calculations have been carried out based on Kubo formula by taking the dislocation scattering as the dominant scattering mechanism. A good agreement has been obtained between the theory and the experiment.

 Key Words: Hall mobility, dislocation scattering, Kubo formula

 

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Makale detayları

ELECTRON MOBILITY IN RELAXED In0.51Ga0.49As AND In0.60Ga0.40As SEMICONDUCTORS AND THE EFFECT OF DISLOCATION SCATTERING

Yazarlar: Mehmet KASAP | Selim ACAR | Bora ALKAN

Yayıncı: Gazi University

Dergi: Gazi University Journal of Science 2004 Vol.17 Issue 1, pp.31-35

Belge Tipi: Makale

Yayın Tarihi: 8/2010

Belge Dili: İngilizce

Document ID (Org No.): 2000430369

eISSN: 2147-1762

Sayı

Yazarlar:

Mehmet KASAP | Selim ACAR | Bora ALKAN

Yayıncı:

Gazi University

Dergi:

Gazi University Journal of Science 2004 Vol.17 Issue 1, pp.31-35

Belge Tipi:

Makale

Yayın Tarihi:

8/2010

Belge Dili:

İngilizce

Document ID (Org No.):

2000430369

eISSN:

2147-1762