285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

İrem Alp; Bilgehan Barış Öner; Esra Eroğlu

Makale detayları

285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

Yazarlar:

İrem Alp | Bilgehan Barış Öner | Esra Eroğlu

Yayıncı:

Kütahya Dumlupinar University

Ana Başlıklar:

Engineering

Dergi:

Journal of Scientific Reports-A Issue 052, pp.51-64

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001282025

pISSN:

2687-6167

Anahtar kelimeler:

Özet:

 In this paper, the systematic computational design process of AlGaN-based multiple quantum-well QW deep-ultraviolet DUV light-emitting diode LED grown on sapphire Al2O3 substrate was investigated. An optimization was held to increase internal quantum efficiency IQE handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation nextnano. As a determining factor, IQE was obtained to be 24 for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70 by a low threading dislocation density TDD and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 Wmm2 and 5.05 V, respectively.

 In this paper, the systematic computational design process of AlGaN-based multiple quantum-well QW deep-ultraviolet DUV light-emitting diode LED grown on sapphire Al2O3 substrate was investigated. An optimization was held to increase internal quantum efficiency IQE handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation nextnano. As a determining factor, IQE was obtained to be 24 for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70 by a low threading dislocation density TDD and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 Wmm2 and 5.05 V, respectively.

 In this paper, the systematic computational design process of AlGaN-based multiple quantum-well QW deep-ultraviolet DUV light-emitting diode LED grown on sapphire Al2O3 substrate was investigated. An optimization was held to increase internal quantum efficiency IQE handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation nextnano. As a determining factor, IQE was obtained to be 24 for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70 by a low threading dislocation density TDD and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 Wmm2 and 5.05 V, respectively.

 In this paper, the systematic computational design process of AlGaN-based multiple quantum-well QW deep-ultraviolet DUV light-emitting diode LED grown on sapphire Al2O3 substrate was investigated. An optimization was held to increase internal quantum efficiency IQE handling the LED parameters such as doping percentage of the n- and the p-type layers of these devices. The structure parameters of the best design were determined through a customized genetic algorithm integrated into the nanostructure quantum electronic simulation nextnano. As a determining factor, IQE was obtained to be 24 for the devised 285 nm LED. It has been demonstrated that this result can be increased up to a remarkably high value of 70 by a low threading dislocation density TDD and reduced Auger recombination. In addition, the operation input power and potential difference were successfully kept below 0.1 Wmm2 and 5.05 V, respectively.

Makale detayları

285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

Yazarlar:

İrem Alp | Bilgehan Barış Öner | Esra Eroğlu

Yayıncı:

Kütahya Dumlupinar University

Ana Başlıklar:

Engineering

Dergi:

Journal of Scientific Reports-A Issue 052, pp.51-64

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001282025

pISSN:

2687-6167

Deep-ultraviolet LED

UV-C LED

Quantum efficiency

Genetic algorithm

Sayı

Makale detayları

285 nm AlGaN-BASED DEEP-ULTRAVIOLET LED WITH HIGH INTERNAL QUANTUM EFFICIENCY: COMPUTATIONAL DESIGN

Yazarlar: İrem Alp | Bilgehan Barış Öner | Esra Eroğlu

Yayıncı: Kütahya Dumlupinar University

Ana Başlıklar: Engineering

Dergi: Journal of Scientific Reports-A Issue 052, pp.51-64

Belge Tipi: Makale

Yayın Tarihi: 3/2023

Belge Dili: İngilizce

Document ID (Org No.): 2001282025

pISSN: 2687-6167

Deep-ultraviolet LED

UV-C LED

Quantum efficiency

Genetic algorithm

Sayı

Yazarlar:

İrem Alp | Bilgehan Barış Öner | Esra Eroğlu

Yayıncı:

Kütahya Dumlupinar University

Ana Başlıklar:

Engineering

Dergi:

Journal of Scientific Reports-A Issue 052, pp.51-64

Belge Tipi:

Makale

Yayın Tarihi:

3/2023

Belge Dili:

İngilizce

Document ID (Org No.):

2001282025

pISSN:

2687-6167