Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films

Satinder K. SHARMA; B. PRASAD and Dinesh KUMAR

Makale detayları

Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films

Yazarlar:

Satinder K. SHARMA | B. PRASAD and Dinesh KUMAR

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2007 Vol.31 Issue 4, pp.217-226

Belge Tipi:

Makale

Yayın Tarihi:

3/2007

Belge Dili:

Türkçe

Document ID (Org No.):

2000761133

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

A memory capacitor formed from Al/Si3N4/Si was prepared by  means of trapping and de trapping mechanism of the dielectric films.   Charge trapping and interface state characteristics of silicon nitride  (Si3N4) films deposited by standard plasma enhanced chemical vapor  deposition technique were investigated.  High frequency  capacitance-voltage (C-V), conductance-voltage (G-V) and current  voltage (I-V) measurements were carried out at various temperatures on  metal-oxide-semiconductor capacitors, for as-deposited samples, post  metallization annealed (PMA) at 400 °C and 600 °C samples.  The  electrically measured characteristics indicate the shift in flat band  voltage VFB in silicon nitride (Si3N4) was initially much higher in  the as-deposited samples.  This is attributed to its high density of  interface traps and higher capability to store the charges in the deep  traps for the application of non volatile memory devices.  An enlarged  memory window in CV characteristics was observed in memory operations,  due to the higher density of traps in silicon--nitride films.   Following post-metallization annealing there is significant shift in  flat band voltage due to moderation of trapping and de-trapping sites  at the interface of thin films; and with this, a new method of post  metallization annealing (PMA) is proposed to moderate the charge  storage capability of metal insulator semiconductor (MIS) memory cell.   This behavior of as-deposited Al/Si3N4/Si MIS structure, and of low  temperature post metallization annealed samples, suggests the behavior  is due to the holes trapping and de-trapping mechanism at the  Al/Si3N4/Si interface, not due to ionic charge displacement.  The  larger memory window indicated by the width of hysteresis and longer  retention time in the memory operations are discussed in terms of  trap-assisted charging / discharging mechanisms.

 

A memory capacitor formed from Al/Si3N4/Si was prepared by  means of trapping and de trapping mechanism of the dielectric films.   Charge trapping and interface state characteristics of silicon nitride  (Si3N4) films deposited by standard plasma enhanced chemical vapor  deposition technique were investigated.  High frequency  capacitance-voltage (C-V), conductance-voltage (G-V) and current  voltage (I-V) measurements were carried out at various temperatures on  metal-oxide-semiconductor capacitors, for as-deposited samples, post  metallization annealed (PMA) at 400 °C and 600 °C samples.  The  electrically measured characteristics indicate the shift in flat band  voltage VFB in silicon nitride (Si3N4) was initially much higher in  the as-deposited samples.  This is attributed to its high density of  interface traps and higher capability to store the charges in the deep  traps for the application of non volatile memory devices.  An enlarged  memory window in CV characteristics was observed in memory operations,  due to the higher density of traps in silicon--nitride films.   Following post-metallization annealing there is significant shift in  flat band voltage due to moderation of trapping and de-trapping sites  at the interface of thin films; and with this, a new method of post  metallization annealing (PMA) is proposed to moderate the charge  storage capability of metal insulator semiconductor (MIS) memory cell.   This behavior of as-deposited Al/Si3N4/Si MIS structure, and of low  temperature post metallization annealed samples, suggests the behavior  is due to the holes trapping and de-trapping mechanism at the  Al/Si3N4/Si interface, not due to ionic charge displacement.  The  larger memory window indicated by the width of hysteresis and longer  retention time in the memory operations are discussed in terms of  trap-assisted charging / discharging mechanisms.

Makale detayları

Application of PMA Towards Moderating the Charge Storage Capability of MIS Memory Cell Based on PECVD Deposited Silicon Nitride Thin Films

Yazarlar:

Satinder K. SHARMA | B. PRASAD and Dinesh KUMAR

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2007 Vol.31 Issue 4, pp.217-226

Belge Tipi:

Makale

Yayın Tarihi:

3/2007

Belge Dili:

Türkçe

Document ID (Org No.):

2000761133

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

PECVD

Nitride films

C-V

G-V

I-V

P M A

hysteresis and memory window

Sayı

Makale detayları

Yazarlar: Satinder K. SHARMA | B. PRASAD and Dinesh KUMAR

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2007 Vol.31 Issue 4, pp.217-226

Belge Tipi: Makale

Yayın Tarihi: 3/2007

Belge Dili: Türkçe

Document ID (Org No.): 2000761133

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Sayı

Yazarlar:

Satinder K. SHARMA | B. PRASAD and Dinesh KUMAR

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2007 Vol.31 Issue 4, pp.217-226

Belge Tipi:

Makale

Yayın Tarihi:

3/2007

Belge Dili:

Türkçe

Document ID (Org No.):

2000761133

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101