Structural and Nanomechanical Properties of Silicon Single Crystals Grown by the Czochralski Method

Tuncay Dikici; Serdar Yıldırım

Makale detayları

Structural and Nanomechanical Properties of Silicon Single Crystals Grown by the Czochralski Method

Yazarlar:

Tuncay Dikici | Serdar Yıldırım

Yayıncı:

Dokuz Eylul University

Ana Başlıklar:

Saf Yarı İletkenler

Dergi:

Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen ve Mühendislik Dergisi Vol.27 Issue 79, pp.121-125

Belge Tipi:

Makale

Yayın Tarihi:

1/2025

Belge Dili:

İngilizce

Document ID (Org No.):

2001336029

pISSN:

1302-9304

Anahtar kelimeler:

Özet:

 The rapid advancements in the fields of artificial intelligence, cloud computing, big data analysis and internet of things have expanded the use of electronic devices and increased the demand for semiconductors. The Czochralski method, the most common and effective production technique for these materials, allows the production of single-crystal forms of elements such as Silicon Si, Germanium Ge, and various semiconductor compounds. In this study, the crystal structure, surface morphology and mechanical properties of a Si wafer, prepared by slicing a single crystal Si ingot grown by the Czochralski method, were determined by x-ray diffraction XRD, scanning electron microscopy SEM, atomic force microscopy AFM and nanoindentation methods, respectively. XRD analysis of the silicon wafer confirmed its single-crystal structure, showing a cubic lattice structure and a single peak on the 100 plane, while SEM and AFM analyses determined that the surface is smooth, even, and undamaged. Hardness and elastic modulus values for the Si wafer, calculated from indentation tests using a Berkovich tip under different loads, were determined to be an average of 19 GPa and 255 GPa, respectively. These results hold vital importance for the advancement of semiconductor technologies. The design and production of electronic devices with superior performance and durability can be achieved with a comprehensive understanding of the mechanical properties of the materials.

 The rapid advancements in the fields of artificial intelligence, cloud computing, big data analysis and internet of things have expanded the use of electronic devices and increased the demand for semiconductors. The Czochralski method, the most common and effective production technique for these materials, allows the production of single-crystal forms of elements such as Silicon Si, Germanium Ge, and various semiconductor compounds. In this study, the crystal structure, surface morphology and mechanical properties of a Si wafer, prepared by slicing a single crystal Si ingot grown by the Czochralski method, were determined by x-ray diffraction XRD, scanning electron microscopy SEM, atomic force microscopy AFM and nanoindentation methods, respectively. XRD analysis of the silicon wafer confirmed its single-crystal structure, showing a cubic lattice structure and a single peak on the 100 plane, while SEM and AFM analyses determined that the surface is smooth, even, and undamaged. Hardness and elastic modulus values for the Si wafer, calculated from indentation tests using a Berkovich tip under different loads, were determined to be an average of 19 GPa and 255 GPa, respectively. These results hold vital importance for the advancement of semiconductor technologies. The design and production of electronic devices with superior performance and durability can be achieved with a comprehensive understanding of the mechanical properties of the materials.

 The rapid advancements in the fields of artificial intelligence, cloud computing, big data analysis and internet of things have expanded the use of electronic devices and increased the demand for semiconductors. The Czochralski method, the most common and effective production technique for these materials, allows the production of single-crystal forms of elements such as Silicon Si, Germanium Ge, and various semiconductor compounds. In this study, the crystal structure, surface morphology and mechanical properties of a Si wafer, prepared by slicing a single crystal Si ingot grown by the Czochralski method, were determined by x-ray diffraction XRD, scanning electron microscopy SEM, atomic force microscopy AFM and nanoindentation methods, respectively. XRD analysis of the silicon wafer confirmed its single-crystal structure, showing a cubic lattice structure and a single peak on the 100 plane, while SEM and AFM analyses determined that the surface is smooth, even, and undamaged. Hardness and elastic modulus values for the Si wafer, calculated from indentation tests using a Berkovich tip under different loads, were determined to be an average of 19 GPa and 255 GPa, respectively. These results hold vital importance for the advancement of semiconductor technologies. The design and production of electronic devices with superior performance and durability can be achieved with a comprehensive understanding of the mechanical properties of the materials.

 Yapay zeka, bulut bilişim, büyük veri analizi ve nesnelerin interneti alanlarındaki hızlı gelişmeler, elektronik cihazların kullanımını genişletmiş ve yarıiletkenlere olan talebi artırmıştır. Bu malzemelerin üretiminde en yaygın ve etkili yöntem olan Czochralski yöntemi, Silisyum Si, Germanyum Ge gibi elementlerin ve çeşitli yarı iletken bileşiklerin tek kristal formunda üretilmesine olanak sağlar. Bu çalışmada, Czochralski yöntemi ile büyütülen silisyum tek kristal ingottan kesilerek hazırlanan Si plakanın wafer kristal yapısı, yüzey morfolojisi ve mekanik özellikleri sırasıyla x-ışınları kırınımı XRD, taramalı elektron ve atomik kuvvet mikroskobu SEM ve AFM ve nanoindentasyon yöntemi ile tespit edilmiştir. Silisyum plakanın XRD analizi, kübik kafes yapısını ve 100 düzleminde tek bir pik göstererek tek kristal yapısını doğrularken, SEM ve AFM analizleriyle, yüzeyin düzgün, pürüzsüz ve hasarsız olduğu belirlenmiştir. Farklı yüklerde Berkovich tip uç kullanılarak yapılan indentasyon testleri sonucunda Si plakaya ait sertlik ve elastisite modülü değerleri ortalama 19 GPa ve 255 GPa olarak hesaplanmıştır. Bu sonuçlar, yarıiletken teknolojilerin ilerlemesi için hayati öneme sahiptir. Üstün performans ve dayanıklılığa sahip elektronik cihazların tasarımı ve üretimi, malzemelerin mekanik özelliklerinin kapsamlı bir şekilde anlaşılmasıyla gerçekleştirilebilir.

Makale detayları

Structural and Nanomechanical Properties of Silicon Single Crystals Grown by the Czochralski Method

Yazarlar:

Tuncay Dikici | Serdar Yıldırım

Yayıncı:

Dokuz Eylul University

Ana Başlıklar:

Saf Yarı İletkenler

Dergi:

Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen ve Mühendislik Dergisi Vol.27 Issue 79, pp.121-125

Belge Tipi:

Makale

Yayın Tarihi:

1/2025

Belge Dili:

İngilizce

Document ID (Org No.):

2001336029

pISSN:

1302-9304

Silicon single crystal

Czochralski method

Nanoindentation

HardnessSilisyum tek kristal

Czochralski yöntemi

Nanoindentasyon

Sertlik

Sayı

Makale detayları

Yazarlar: Tuncay Dikici | Serdar Yıldırım

Yayıncı: Dokuz Eylul University

Ana Başlıklar: Saf Yarı İletkenler

Dergi: Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen ve Mühendislik Dergisi Vol.27 Issue 79, pp.121-125

Belge Tipi: Makale

Yayın Tarihi: 1/2025

Belge Dili: İngilizce

Document ID (Org No.): 2001336029

pISSN: 1302-9304

Sayı

Yazarlar:

Tuncay Dikici | Serdar Yıldırım

Yayıncı:

Dokuz Eylul University

Ana Başlıklar:

Saf Yarı İletkenler

Dergi:

Dokuz Eylül Üniversitesi Mühendislik Fakültesi Fen ve Mühendislik Dergisi Vol.27 Issue 79, pp.121-125

Belge Tipi:

Makale

Yayın Tarihi:

1/2025

Belge Dili:

İngilizce

Document ID (Org No.):

2001336029

pISSN:

1302-9304