Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Perihan Durmuş; Çiğdem Bilkan; Mert Yıldırım

Makale detayları

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Yazarlar:

Perihan Durmuş | Çiğdem Bilkan | Mert Yıldırım

Yayıncı:

Gazi University

Dergi:

Journal of Polytechnic 2017 Vol.20 Issue 4, pp.1003-1008

Belge Tipi:

Makale

Yayın Tarihi:

12/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000590939

Sıklık:

Aylık

eISSN:

2147-9429

Özet:

 


In this work, a metal-ferroelectric-semiconductor (MFS) type capacitor
was fabricated and admittance measurements were held in a wide frequency range
of 1 kHz-5 MHz at room temperature for the investigation of frequency and
voltage dependence of complex dielectric constant, complex electric modulus and
electrical conductivity of the MFS
capacitor. Bismuth titanate (Bi4Ti3O12) with high dielectric constant was used as
interfacial ferroelectric material and the structure of MFS capacitor was
obtained as Au/Bi4Ti3O12/n-Si. Experimental
results showed that dielectric, modulus and conductivity parameters are strong
functions of frequency and voltage especially in depletion and accumulation
regions due to the existence of surface states (Nss), series
resistance (Rs), interfacial polarization and interfacial layer. It
was found that Rs of the structure and interfacial ferroelectric
layer are efective in accumulation region whereas surface states (Nss)
and interfacial polarization are efective in
depletion region. Also the changes in dielectric, modulus and conductivity
parameters become considerably high particularly at low frequencies due to high
values of Rs and Nss. The observed anomalous peak in voltage dependent plots of
capacitance and dielectric constant was atributed to the particular density
distribution of Nss, Rs and minority carrier injection.
Moreover, the value of conductivity
at low and intermediate frequencies is almost independent of frequency thus low
frequency data was used to extract d.c. conductivity. This work showed that the use of high-dielectric Bi4Ti3O12
as ferroelectric interfacial layer in a MFS capacitor is preferable due to high
values of its dielectric constant compared with traditional insulator layer
materials such as SiO2 and SnO2. Therefore, a MFS
capacitor with Bi4Ti3O12 interfacial layer can
store more energy thanks to its high dielectric constant.

.

Makale detayları

Effects of Frequency and Bias Voltage on Dielectric Properties and Electric Modulus of Au/Bi4Ti3O12/n-Si (MFS) Capacitors

Yazarlar: Perihan Durmuş | Çiğdem Bilkan | Mert Yıldırım

Yayıncı: Gazi University

Dergi: Journal of Polytechnic 2017 Vol.20 Issue 4, pp.1003-1008

Belge Tipi: Makale

Yayın Tarihi: 12/2017

Belge Dili: Türkçe

Document ID (Org No.): 2000590939

Sıklık: Aylık

eISSN: 2147-9429

Sayı

Yazarlar:

Perihan Durmuş | Çiğdem Bilkan | Mert Yıldırım

Yayıncı:

Gazi University

Dergi:

Journal of Polytechnic 2017 Vol.20 Issue 4, pp.1003-1008

Belge Tipi:

Makale

Yayın Tarihi:

12/2017

Belge Dili:

Türkçe

Document ID (Org No.):

2000590939

Sıklık:

Aylık

eISSN:

2147-9429