Characterization of In4Te3 Single crystals

M. DONGOL; M. M. NASSARY; M. K. GERGES; M. A. SEBAG

Makale detayları

Characterization of In4Te3 Single crystals

Yazarlar:

M. DONGOL | M. M. NASSARY | M. K. GERGES | M. A. SEBAG

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2003 Vol.27 Issue 3, pp.211-218

Belge Tipi:

Makale

Yayın Tarihi:

2/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761958

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

Single crystals of In4Te3 grown by modified Bridgman  technique were characterized by measurement of the Hall coefficient,  electrical conductivity and Seebeck coefficient, in the temperature  range 200-500 K. The investigated sample was found to be of P-type  conductivity.RH at room temperature was 3.1 \times 1014  cm3/coul and the carrier concentration was evaluated as 2.007  \times 1014 cm3.  Energy gap D Eg and ionization energy  D Ea were estimated as 0.28 eV and 0.12 eV, respectively, and  the diffusion coefficient, the diffusion length, the mean free time  between collision and the effective mass of carriers were evaluated.   The variation of the Hall mobility with temperature was studied and  hence the scattering mechanism is discussed.

 

Single crystals of In4Te3 grown by modified Bridgman  technique were characterized by measurement of the Hall coefficient,  electrical conductivity and Seebeck coefficient, in the temperature  range 200-500 K. The investigated sample was found to be of P-type  conductivity.RH at room temperature was 3.1 \times 1014  cm3/coul and the carrier concentration was evaluated as 2.007  \times 1014 cm3.  Energy gap D Eg and ionization energy  D Ea were estimated as 0.28 eV and 0.12 eV, respectively, and  the diffusion coefficient, the diffusion length, the mean free time  between collision and the effective mass of carriers were evaluated.   The variation of the Hall mobility with temperature was studied and  hence the scattering mechanism is discussed.

Makale detayları

Characterization of In4Te3 Single crystals

Yazarlar:

M. DONGOL | M. M. NASSARY | M. K. GERGES | M. A. SEBAG

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2003 Vol.27 Issue 3, pp.211-218

Belge Tipi:

Makale

Yayın Tarihi:

2/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761958

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

In4Te3

Hall and Seebeck coefficients

Electrical conductivity

Sayı

Makale detayları

Characterization of In4Te3 Single crystals

Yazarlar: M. DONGOL | M. M. NASSARY | M. K. GERGES | M. A. SEBAG

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2003 Vol.27 Issue 3, pp.211-218

Belge Tipi: Makale

Yayın Tarihi: 2/2003

Belge Dili: Türkçe

Document ID (Org No.): 2000761958

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

In4Te3

Hall and Seebeck coefficients

Electrical conductivity

Sayı

Yazarlar:

M. DONGOL | M. M. NASSARY | M. K. GERGES | M. A. SEBAG

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2003 Vol.27 Issue 3, pp.211-218

Belge Tipi:

Makale

Yayın Tarihi:

2/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761958

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101