Tailoring the Optical and Electrical Properties of ZnO Films: Co-Doping with F and In

Ibrahim Gunes

Makale detayları

Tailoring the Optical and Electrical Properties of ZnO Films: Co-Doping with F and In

Yazarlar:

Ibrahim Gunes

Yayıncı:

Gazi University

Ana Başlıklar:

Malzeme Fiziği

Dergi:

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji Vol.13 Issue 2, pp.567-578

Belge Tipi:

Makale

Yayın Tarihi:

6/2025

Belge Dili:

İngilizce

Document ID (Org No.):

2001289900

pISSN:

2147-9526

Anahtar kelimeler:

Özet:

 In this study, undoped ZnO, 3 In doped ZnO and 5 F: 3 In co-doped ZnO films were successfully synthesized via ultrasonic spray pyrolysis. The study objective is to investigate the changes in physical properties especially opto-electrical of ZnO films with F:In co-doping strategy and thus contribute to developing high-performance materials for opto-electronic devices. Structural analysis showed that obvious changes occurred in the ZnO crystal structure with doping and the dopant atoms were successfully integrated into the ZnO lattice. Morphological studies showed that 5 F: 3 In co-doped ZnO films exhibit a homogeneous, nanostructured, and compact surface, with surface roughness being lower than undoped ZnO films. Moreover, SEM images identified granular nanostructures in 3 In doped and 5 F: 3 In co-doped ZnO films, which were attributed to the stabilization of grain boundaries by dopant atoms, promoting a uniform structure. Optical analysis revealed that the 5 F: 3 In co-doped ZnO film exhibited a transmittance of 83 in the visible region and a wider optical band gap of 3.32 eV compared to other films. Electrical characterization demonstrated that the carrier concentration of ZnO films was 1.031017 cm-3, increasing markedly to 1.141018 cm-3 in 5 F: 3 In co-doped ZnO film. Additionally, the resistivity of the 5 F: 3 In co-doped ZnO film was detected at the lowest level of 1.6510-1 cm. This data reveals the potential of 5 F: 3 In co-doped ZnO films for advanced opto-electronic applications, including photovoltaic cells, display technologies, and LEDs. Co-doping ZnO films with fluorine and indium emerge as a promising strategy to enhance electrical and optical properties.

 In this study, undoped ZnO, 3 In doped ZnO and 5 F: 3 In co-doped ZnO films were successfully synthesized via ultrasonic spray pyrolysis. The study objective is to investigate the changes in physical properties especially opto-electrical of ZnO films with F:In co-doping strategy and thus contribute to developing high-performance materials for opto-electronic devices. Structural analysis showed that obvious changes occurred in the ZnO crystal structure with doping and the dopant atoms were successfully integrated into the ZnO lattice. Morphological studies showed that 5 F: 3 In co-doped ZnO films exhibit a homogeneous, nanostructured, and compact surface, with surface roughness being lower than undoped ZnO films. Moreover, SEM images identified granular nanostructures in 3 In doped and 5 F: 3 In co-doped ZnO films, which were attributed to the stabilization of grain boundaries by dopant atoms, promoting a uniform structure. Optical analysis revealed that the 5 F: 3 In co-doped ZnO film exhibited a transmittance of 83 in the visible region and a wider optical band gap of 3.32 eV compared to other films. Electrical characterization demonstrated that the carrier concentration of ZnO films was 1.031017 cm-3, increasing markedly to 1.141018 cm-3 in 5 F: 3 In co-doped ZnO film. Additionally, the resistivity of the 5 F: 3 In co-doped ZnO film was detected at the lowest level of 1.6510-1 cm. This data reveals the potential of 5 F: 3 In co-doped ZnO films for advanced opto-electronic applications, including photovoltaic cells, display technologies, and LEDs. Co-doping ZnO films with fluorine and indium emerge as a promising strategy to enhance electrical and optical properties.

 In this study, undoped ZnO, 3 In doped ZnO and 5 F: 3 In co-doped ZnO films were successfully synthesized via ultrasonic spray pyrolysis. The study objective is to investigate the changes in physical properties especially opto-electrical of ZnO films with F:In co-doping strategy and thus contribute to developing high-performance materials for opto-electronic devices. Structural analysis showed that obvious changes occurred in the ZnO crystal structure with doping and the dopant atoms were successfully integrated into the ZnO lattice. Morphological studies showed that 5 F: 3 In co-doped ZnO films exhibit a homogeneous, nanostructured, and compact surface, with surface roughness being lower than undoped ZnO films. Moreover, SEM images identified granular nanostructures in 3 In doped and 5 F: 3 In co-doped ZnO films, which were attributed to the stabilization of grain boundaries by dopant atoms, promoting a uniform structure. Optical analysis revealed that the 5 F: 3 In co-doped ZnO film exhibited a transmittance of 83 in the visible region and a wider optical band gap of 3.32 eV compared to other films. Electrical characterization demonstrated that the carrier concentration of ZnO films was 1.031017 cm-3, increasing markedly to 1.141018 cm-3 in 5 F: 3 In co-doped ZnO film. Additionally, the resistivity of the 5 F: 3 In co-doped ZnO film was detected at the lowest level of 1.6510-1 cm. This data reveals the potential of 5 F: 3 In co-doped ZnO films for advanced opto-electronic applications, including photovoltaic cells, display technologies, and LEDs. Co-doping ZnO films with fluorine and indium emerge as a promising strategy to enhance electrical and optical properties.

 Bu çalışmada, katkısız ZnO, 3 In katkılı ZnO ve 5 F: 3 In eş-katkılı ZnO filmleri ultrasonik sprey pirolizi ile başarıyla sentezlendi. Çalışmanın amacı, F:In eş-katkılama stratejisi ile ZnO filmlerinin fiziksel özelliklerindeki özellikle opto-elektriksel değişimleri incelemek ve böylece opto-elektronik cihazlar için yüksek performanslı malzemeler geliştirmeye katkıda bulunmaktır. Yapısal analiz, katkılama ile ZnO kristal yapısında belirgin değişimler meydana geldiğini ve katkı atomlarının ZnO örgüsüne başarıyla entegre olduğunu göstermiştir. Morfolojik çalışmalar, 5 F: 3 In eş-katkılı ZnO filmlerinin homojen, nanoyapılı ve kompakt bir yüzey sergilediğini, yüzey pürüzlülüğünün katkısız ZnO filmlerinden daha düşük olduğunu göstermiştir. Dahası, SEM görüntüleri, katkı atomları tarafından tane sınırlarının stabilizasyonuna atfedilen ve düzgün bir yapıyı destekleyen 3 In katkılı ve 5 F: 3 In eş katkılı ZnO filmlerinde granüler nanoyapıları tanımladı. Optik analiz, 5 F: 3 In eş-katkılı ZnO filminin görünür bölgede 83lük bir geçirgenlik ve diğer filmlere kıyasla 3.32 eVlik daha geniş bir optik bant aralığı sergilediğini ortaya koydu. Elektriksel karakterizasyon, ZnO filmlerinin taşıyıcı konsantrasyonunun 1.031017 cm-3 olduğunu, 5 F: 3 In eş-katkılı ZnO filminde 1.141018 cm-3e belirgin bir şekilde arttığını gösterdi. Ek olarak, 5 F: 3 In eş katkılı ZnO filminin özdirenci en düşük seviyede, 1.6510-1 cmde tespit edildi. Bu veriler, fotovoltaik hücreler, ekran teknolojileri ve LEDler dahil olmak üzere gelişmiş opto-elektronik uygulamalar için 5 F: 3 In eş-katkılı ZnO filmlerinin potansiyelini ortaya koymaktadır. ZnO filmlerinin flor ve indiyumla eş-katkılanması, elektriksel ve optik özellikleri geliştirmek için umut verici bir strateji olarak ortaya çıkmaktadır.

Makale detayları

Tailoring the Optical and Electrical Properties of ZnO Films: Co-Doping with F and In

Yazarlar:

Ibrahim Gunes

Yayıncı:

Gazi University

Ana Başlıklar:

Malzeme Fiziği

Dergi:

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji Vol.13 Issue 2, pp.567-578

Belge Tipi:

Makale

Yayın Tarihi:

6/2025

Belge Dili:

İngilizce

Document ID (Org No.):

2001289900

pISSN:

2147-9526

Ultrasonic Spray Pyrolysis

TCO Materials

Optical Properties

Electrical Properties

F:In Co-doped ZnOUltrasonik Sprey Piroliz

TCO Malzemeler

F:In Eş-katkılı ZnO

Optik Özellikler

Elektriksel Özellikler

Sayı

Makale detayları

Yazarlar: Ibrahim Gunes

Yayıncı: Gazi University

Ana Başlıklar: Malzeme Fiziği

Dergi: Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji Vol.13 Issue 2, pp.567-578

Belge Tipi: Makale

Yayın Tarihi: 6/2025

Belge Dili: İngilizce

Document ID (Org No.): 2001289900

pISSN: 2147-9526

Sayı

Yazarlar:

Ibrahim Gunes

Yayıncı:

Gazi University

Ana Başlıklar:

Malzeme Fiziği

Dergi:

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji Vol.13 Issue 2, pp.567-578

Belge Tipi:

Makale

Yayın Tarihi:

6/2025

Belge Dili:

İngilizce

Document ID (Org No.):

2001289900

pISSN:

2147-9526