Investigation of the Lorenz number and the carrier concentration of the GaAs semiconductor depending on temperature

Ebru ÇOPUROĞLU

doi:https://doi.org/10.54187/jnrs.1013381

Makale detayları

Investigation of the Lorenz number and the carrier concentration of the GaAs semiconductor depending on temperature

Yazarlar:

Ebru ÇOPUROĞLU

Yayıncı:

Tokat Gaziosmanpasa University

Dergi:

Journal of New Results in Science 2021 Vol.10 Issue 3, pp.89-97

Belge Tipi:

Makale

Yayın Tarihi:

12/2021

Belge Dili:

İngilizce

Document ID (Org No.):

2000489807

Sıklık:

Üç Yıllık

pISSN:

1304-7981

DOI:

https://doi.org/10.54187/jnrs.1013381

Özet:

 

As is known, semiconductors are insulators under normal conditions but can become conductive with external excitation. Considering the effects of acting on these materials, the number of free electrons and the electrical conductivity will increase with increasing temperature. The increase in the concentration of free electrons in the semiconductor can be shown as the increase in electrical conductivity. If a semiconductor is exposed to an electric field with increasing concentration, we can have an idea about how the number of free electrons or the speed of free electrons will be affected. It is well known that it is necessary to calculate two-parameter Fermi functions to solve the properties of kinetic effects and electron transport phenomena in semiconductors. Effective methods have been developed for the calculation of two-parameter Fermi functions in literature. In this study, analytical calculations for the Lorenz number and the carrier concentration of the GaAs semiconductor were made using the two-parameter Fermi function.

Makale detayları

Investigation of the Lorenz number and the carrier concentration of the GaAs semiconductor depending on temperature

Yazarlar: Ebru ÇOPUROĞLU

Yayıncı: Tokat Gaziosmanpasa University

Dergi: Journal of New Results in Science 2021 Vol.10 Issue 3, pp.89-97

Belge Tipi: Makale

Yayın Tarihi: 12/2021

Belge Dili: İngilizce

Document ID (Org No.): 2000489807

Sıklık: Üç Yıllık

pISSN: 1304-7981

DOI: https://doi.org/10.54187/jnrs.1013381

Sayı

Yazarlar:

Ebru ÇOPUROĞLU

Yayıncı:

Tokat Gaziosmanpasa University

Dergi:

Journal of New Results in Science 2021 Vol.10 Issue 3, pp.89-97

Belge Tipi:

Makale

Yayın Tarihi:

12/2021

Belge Dili:

İngilizce

Document ID (Org No.):

2000489807

Sıklık:

Üç Yıllık

pISSN:

1304-7981

DOI:

https://doi.org/10.54187/jnrs.1013381