Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts

Abdulmecit TURUT

Makale detayları

Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts

Yazarlar:

Abdulmecit TURUT

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2012 Vol.36 Issue 2, pp.235-244

Belge Tipi:

Makale

Yayın Tarihi:

1/2012

Belge Dili:

Türkçe

Document ID (Org No.):

2000760425

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

We have formed the ideal Co/n-GaAs Schottky barrier diodes  (SBDs) by magnetron DC sputtering.  The experimental current-voltage  data of the Co/n-GaAs SBD are almost independent of the sample  temperature and quite well obey the thermionic emission model from 100  K to 320 K. We have showed that the temperature coefficient of the  barrier height can be determined using Norde's method instead of the  temperature-dependent capacitance-voltage measurements or the  flat-band barrier height values because the thermionic emission  current dominates in the ideal SBDs.  We have obtained a barrier  height temperature coefficient value of a = 0.41 meV/K for  Co/n-GaAs SBDs used in this work, which is in close agreement with  values reported for the metal/n-GaAs Schottky diodes in the  literature.

 

We have formed the ideal Co/n-GaAs Schottky barrier diodes  (SBDs) by magnetron DC sputtering.  The experimental current-voltage  data of the Co/n-GaAs SBD are almost independent of the sample  temperature and quite well obey the thermionic emission model from 100  K to 320 K. We have showed that the temperature coefficient of the  barrier height can be determined using Norde's method instead of the  temperature-dependent capacitance-voltage measurements or the  flat-band barrier height values because the thermionic emission  current dominates in the ideal SBDs.  We have obtained a barrier  height temperature coefficient value of a = 0.41 meV/K for  Co/n-GaAs SBDs used in this work, which is in close agreement with  values reported for the metal/n-GaAs Schottky diodes in the  literature.

Makale detayları

Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts

Yazarlar: Abdulmecit TURUT

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2012 Vol.36 Issue 2, pp.235-244

Belge Tipi: Makale

Yayın Tarihi: 1/2012

Belge Dili: Türkçe

Document ID (Org No.): 2000760425

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Schottky barrier diode

Norde's method

GaAs

temperature coefficient of the barrier height

Sayı

Yazarlar:

Abdulmecit TURUT

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2012 Vol.36 Issue 2, pp.235-244

Belge Tipi:

Makale

Yayın Tarihi:

1/2012

Belge Dili:

Türkçe

Document ID (Org No.):

2000760425

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101