Investigation Of Dielectric Properties For SnO2-PVA/n-Si Schottky Barrier Diode

Çiğdem Bilkan

Makale detayları

Investigation Of Dielectric Properties For SnO2-PVA/n-Si Schottky Barrier Diode

Yazarlar:

Çiğdem Bilkan

Yayıncı:

Bingol University

Ana Başlıklar:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Dergi:

Türk Doğa ve Fen Dergisi Issue 1, pp.15-20

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001328970

pISSN:

2149-6366

Anahtar kelimeler:

Özet:

 The dielectric properties of SnO2-PVA nanocomposite films were examined graphically using capacitance C and conductivity Gw data obtained over a wide frequency and voltage range at room temperature. For SnO2-PVAn-Si, some dielectric parameters dielectric constants ε, ε and electrical modulus real M and imaginary M parts, loss tangent tan δ and ac electrical conductivity σac frequency and voltage dependence were calculated. As the frequency increased for each applied bias voltage, the ε, ε and tan δ values decreased, and it was observed that the changes in these parameters were more effective at low frequencies due to the additional loads on the interface states. While M increases as the frequency increases due to the short-range mobility of charge carriers and has low values in the low-frequency region. The value of M decreases as the frequency increases due to the decrease in polarization and the density of interface states Nss effects. While the value of electrical conductivity is almost constant at low frequencies, it increases almost exponentially at high frequencies.

 The dielectric properties of SnO2-PVA nanocomposite films were examined graphically using capacitance C and conductivity Gw data obtained over a wide frequency and voltage range at room temperature. For SnO2-PVAn-Si, some dielectric parameters dielectric constants ε, ε and electrical modulus real M and imaginary M parts, loss tangent tan δ and ac electrical conductivity σac frequency and voltage dependence were calculated. As the frequency increased for each applied bias voltage, the ε, ε and tan δ values decreased, and it was observed that the changes in these parameters were more effective at low frequencies due to the additional loads on the interface states. While M increases as the frequency increases due to the short-range mobility of charge carriers and has low values in the low-frequency region. The value of M decreases as the frequency increases due to the decrease in polarization and the density of interface states Nss effects. While the value of electrical conductivity is almost constant at low frequencies, it increases almost exponentially at high frequencies.

 The dielectric properties of SnO2-PVA nanocomposite films were examined graphically using capacitance C and conductivity Gw data obtained over a wide frequency and voltage range at room temperature. For SnO2-PVAn-Si, some dielectric parameters dielectric constants ε, ε and electrical modulus real M and imaginary M parts, loss tangent tan δ and ac electrical conductivity σac frequency and voltage dependence were calculated. As the frequency increased for each applied bias voltage, the ε, ε and tan δ values decreased, and it was observed that the changes in these parameters were more effective at low frequencies due to the additional loads on the interface states. While M increases as the frequency increases due to the short-range mobility of charge carriers and has low values in the low-frequency region. The value of M decreases as the frequency increases due to the decrease in polarization and the density of interface states Nss effects. While the value of electrical conductivity is almost constant at low frequencies, it increases almost exponentially at high frequencies.

 The dielectric properties of SnO2-PVA nanocomposite films were examined graphically using capacitance C and conductivity Gw data obtained over a wide frequency and voltage range at room temperature. For SnO2-PVAn-Si, some dielectric parameters dielectric constants ε, ε and electrical modulus real M and imaginary M parts, loss tangent tan δ and ac electrical conductivity σac frequency and voltage dependence were calculated. As the frequency increased for each applied bias voltage, the ε, ε and tan δ values decreased, and it was observed that the changes in these parameters were more effective at low frequencies due to the additional loads on the interface states. While M increases as the frequency increases due to the short-range mobility of charge carriers and has low values in the low-frequency region. The value of M decreases as the frequency increases due to the decrease in polarization and the density of interface states Nss effects. While the value of electrical conductivity is almost constant at low frequencies, it increases almost exponentially at high frequencies.

Makale detayları

Investigation Of Dielectric Properties For SnO2-PVA/n-Si Schottky Barrier Diode

Yazarlar:

Çiğdem Bilkan

Yayıncı:

Bingol University

Ana Başlıklar:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Dergi:

Türk Doğa ve Fen Dergisi Issue 1, pp.15-20

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001328970

pISSN:

2149-6366

Schottky Barrier Diodes

Dielectric properties

Electrical modulus

Sayı

Makale detayları

Investigation Of Dielectric Properties For SnO2-PVA/n-Si Schottky Barrier Diode

Yazarlar: Çiğdem Bilkan

Yayıncı: Bingol University

Ana Başlıklar: Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Dergi: Türk Doğa ve Fen Dergisi Issue 1, pp.15-20

Belge Tipi: Makale

Yayın Tarihi: 1/2024

Belge Dili: İngilizce

Document ID (Org No.): 2001328970

pISSN: 2149-6366

Schottky Barrier Diodes

Dielectric properties

Electrical modulus

Sayı

Yazarlar:

Çiğdem Bilkan

Yayıncı:

Bingol University

Ana Başlıklar:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik

Dergi:

Türk Doğa ve Fen Dergisi Issue 1, pp.15-20

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001328970

pISSN:

2149-6366