Investigation of Optoelectronic Properties of Ag/Pentacene/Cu MIM Structure

Fatih Ünal

Makale detayları

Investigation of Optoelectronic Properties of Ag/Pentacene/Cu MIM Structure

Yazarlar:

Fatih Ünal

Yayıncı:

Giresun University

Ana Başlıklar:

Klasik Fizik (Diğer)

Dergi:

Karadeniz Fen Bilimleri Dergisi Vol.13 Issue 4, pp.1798-1806

Belge Tipi:

Makale

Yayın Tarihi:

12/2023

Belge Dili:

Türkçe

Document ID (Org No.):

2001305323

pISSN:

2564-7377

Anahtar kelimeler:

Özet:

 AgpentaceneCu MIM structure metal-insulator-metal was successfully produced using thermal evaporation method. The basic I-V characterization of the produced structure was investigated at dark and 20, 40, 60, 80, 100 mW.cm-2 light intensity. Diode parameters of MIM structure; the ideality factor n, barrier height ϕb, reverse saturation current I0, series resistance Rs and Shunt resistance Rsh values were determined at both dark and different light intensities. In dark environment, n, ϕb, I0, Rs and Rsh values were determined as 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω and 3.85 x104 Ω, respectively. In addition, the photodetector parameters of the produced MIM structure; photocurrent Iph, sensitivity R and specific detective D values were also investigated at different light intensities and the maximum values were determined to be 7.85x10-5 A, 6.09x10-3 A.W-1 and 1.86x107 Jones, respectively.

 AgpentaceneCu MIM structure metal-insulator-metal was successfully produced using thermal evaporation method. The basic I-V characterization of the produced structure was investigated at dark and 20, 40, 60, 80, 100 mW.cm-2 light intensity. Diode parameters of MIM structure; the ideality factor n, barrier height ϕb, reverse saturation current I0, series resistance Rs and Shunt resistance Rsh values were determined at both dark and different light intensities. In dark environment, n, ϕb, I0, Rs and Rsh values were determined as 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω and 3.85 x104 Ω, respectively. In addition, the photodetector parameters of the produced MIM structure; photocurrent Iph, sensitivity R and specific detective D values were also investigated at different light intensities and the maximum values were determined to be 7.85x10-5 A, 6.09x10-3 A.W-1 and 1.86x107 Jones, respectively.

 AgpentaceneCu MIM structure metal-insulator-metal was successfully produced using thermal evaporation method. The basic I-V characterization of the produced structure was investigated at dark and 20, 40, 60, 80, 100 mW.cm-2 light intensity. Diode parameters of MIM structure; the ideality factor n, barrier height ϕb, reverse saturation current I0, series resistance Rs and Shunt resistance Rsh values were determined at both dark and different light intensities. In dark environment, n, ϕb, I0, Rs and Rsh values were determined as 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω and 3.85 x104 Ω, respectively. In addition, the photodetector parameters of the produced MIM structure; photocurrent Iph, sensitivity R and specific detective D values were also investigated at different light intensities and the maximum values were determined to be 7.85x10-5 A, 6.09x10-3 A.W-1 and 1.86x107 Jones, respectively.

 AgpentasenCu MIM yapısı metal-insulator-metal termal buharlaştırma yöntemi kullanılarak başarılı bir şekilde üretilmiştir. Üretilen yapının temel I-V karakterizasyonu karanlık ve 20, 40, 60, 80, 100 mW.cm-2 ışık şiddetinde incelenmiştir. MIM yapısının diyot parametreleri; idealite faktörü n, engel yüksekliği ϕb, ters doyma akımı I0, seri direnç Rs ve Shunt direnç Rsh değerleri hem karanlık hem de farklı ışık şiddetlerinde belirlenmiştir. Karanlık ortamda sırasıyla n, ϕb, I0, Rs ve Rsh değerleri 7.95, 0.31 eV, 1.95x10-6 A, 3.13x104 Ω ile 3.85 x104 Ω olduğu belirlenmiştir. Ayrıca üretilen MIM yapısının fotodedektör parametreleri; fotoakım Iph, duyarlılık R ve özgül dedektiflik D değerleri de farklı ışık şiddetlerinde incelenmiştir ve maksimum değerlerin sırasıyla 7.85x10-5 A, 6.09x10-3 A.W-1 ve 1.86x107 Jones olduğu belirlenmiştir.

Makale detayları

Investigation of Optoelectronic Properties of Ag/Pentacene/Cu MIM Structure

Yazarlar:

Fatih Ünal

Yayıncı:

Giresun University

Ana Başlıklar:

Klasik Fizik (Diğer)

Dergi:

Karadeniz Fen Bilimleri Dergisi Vol.13 Issue 4, pp.1798-1806

Belge Tipi:

Makale

Yayın Tarihi:

12/2023

Belge Dili:

Türkçe

Document ID (Org No.):

2001305323

pISSN:

2564-7377

Metal-insulator-metal

MIM

pentacene

optoelectronicMetal-insulator-metal

MIM

pentasen

optoelektronik

Sayı

Makale detayları

Yazarlar: Fatih Ünal

Yayıncı: Giresun University

Ana Başlıklar: Klasik Fizik (Diğer)

Dergi: Karadeniz Fen Bilimleri Dergisi Vol.13 Issue 4, pp.1798-1806

Belge Tipi: Makale

Yayın Tarihi: 12/2023

Belge Dili: Türkçe

Document ID (Org No.): 2001305323

pISSN: 2564-7377

Sayı

Yazarlar:

Fatih Ünal

Yayıncı:

Giresun University

Ana Başlıklar:

Klasik Fizik (Diğer)

Dergi:

Karadeniz Fen Bilimleri Dergisi Vol.13 Issue 4, pp.1798-1806

Belge Tipi:

Makale

Yayın Tarihi:

12/2023

Belge Dili:

Türkçe

Document ID (Org No.):

2001305323

pISSN:

2564-7377