Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Ali BALTAKESMEZ

doi:https://doi.org/10.21597/jist.642111

Makale detayları

Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Yazarlar:

Ali BALTAKESMEZ

Yayıncı:

Igdir University

Ana Başlıklar:

Fizik

Dergi:

Journal of the Institute of Science and Technology 2020 Vol.10 Issue 1, pp.214-224

Belge Tipi:

Makale

Yayın Tarihi:

2/2020

Belge Dili:

İngilizce

Document ID (Org No.):

2000464363

Sıklık:

Üç Aylık

eISSN:

2536-4618

DOI:

https://doi.org/10.21597/jist.642111

Özet:

 


In this study, the SnS2 thin film deposited
by spray
pyrolysis technique has been analyzed by XRD, SEM and UV-visible
characterization techniques to investigate of structural, morphological and
optical properties. The thin film has dominant (001)
and (002) crystallographic planes, compact grain-like morphology with uniform and
good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Ge
structure has been characterized by electrical measurement. The diode has
ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias
current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Ge
structure has been characterized by 1.5 AM solar simulator for determine of
solar light. The diode under 100 mW/cm2 solar-light source has
exhibited 0.24% PCE with Jsc
of 1.83 mA/cm2, Voc of 0.46 V and FF of 0.28. 


.

 


In this study, the SnS2 thin film deposited by spray pyrolysis technique has been analyzed by XRD, SEM and UV-visible characterization techniques to investigate of structural, morphological and optical properties. The thin film has dominant (001) and (002) crystallographic planes, compact grain-like morphology with uniform and good coverage surface and 2.42 eV band gap. The Sn/SnS2/Si/Au-Ge structure has been characterized by electrical measurement. The diode has ideality factor of 1.34 and barrier height of 0.762 eV with reverse-bias current temperature-dependent strongly. In addition, the ITO/SnS2/Si/Au-Ge structure has been characterized by 1.5 AM solar simulator for determine of solar light. The diode under 100 mW/cm2 solar-light source has exhibited 0.24% PCE with Jsc of 1.83 mA/cm2, Voc of 0.46 V and FF of 0.28. 

.

Makale detayları

Electrical characterization and solar light sensitivity of SnS2/n-Si junction

Yazarlar: Ali BALTAKESMEZ

Yayıncı: Igdir University

Ana Başlıklar: Fizik

Dergi: Journal of the Institute of Science and Technology 2020 Vol.10 Issue 1, pp.214-224

Belge Tipi: Makale

Yayın Tarihi: 2/2020

Belge Dili: İngilizce

Document ID (Org No.): 2000464363

Sıklık: Üç Aylık

eISSN: 2536-4618

DOI: https://doi.org/10.21597/jist.642111

Sayı

Yazarlar:

Ali BALTAKESMEZ

Yayıncı:

Igdir University

Ana Başlıklar:

Fizik

Dergi:

Journal of the Institute of Science and Technology 2020 Vol.10 Issue 1, pp.214-224

Belge Tipi:

Makale

Yayın Tarihi:

2/2020

Belge Dili:

İngilizce

Document ID (Org No.):

2000464363

Sıklık:

Üç Aylık

eISSN:

2536-4618

DOI:

https://doi.org/10.21597/jist.642111