Investigation of Some Properties of 4-Amino-2-Methyl-Quinoline and CdS Nano Composite Thin Films for Production of Diodes

Ramazan Demir; İsmet Kaya

Makale detayları

Investigation of Some Properties of 4-Amino-2-Methyl-Quinoline and CdS Nano Composite Thin Films for Production of Diodes

Yazarlar:

Ramazan Demir | İsmet Kaya

Yayıncı:

Afyon Kocatepe University

Ana Başlıklar:

Fotonik | Optoelektronik ve Optik İletişim

Dergi:

Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.24 Issue 6, pp.1297-1304

Belge Tipi:

Makale

Yayın Tarihi:

2/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001330215

pISSN:

2149-3367

Anahtar kelimeler:

Özet:

 The aim of this study is to produce a diode, which is a basic electronic circuit element, and analyze its physical characterization. In this study, a diode was produced from CdS and C10H10N2 films, and its structural, optical, and electrical properties were investigated. First, a thin CdS film was deposited on an ITO substrate using the CBD method. Then, a C10H10N2 film was coated on this CdS film by the spin coating method. The CdS film has n-type semiconductor properties, whereas the C10H10N2 film has p-type semiconductor properties. XRD, SEM, AFM, UV-Vis spectroscopy, and IV measurements were performed on the produced films. According to the XRD result, a sharp peak at 27.07 was observed in the hexagonal phase of CdS. At this angle, a grain size of 33.3 nm was calculated according to the XRD result. Based on the SEM and AFM measurement results, it was determined that the film surface was uniform and dotted. According to the UV-Vis results, in addition to the dd transition, ππ and nπ transitions were also observed. From the I-V diagram, it was seen that the heterojunction structure of the CdSC10H10N2 films had a diode property. The value of rectification factor was calculated as 2.91x102 from the I-V data. In addition, the ideality factor was calculated as 1.93 using the traditional method.

 The aim of this study is to produce a diode, which is a basic electronic circuit element, and analyze its physical characterization. In this study, a diode was produced from CdS and C10H10N2 films, and its structural, optical, and electrical properties were investigated. First, a thin CdS film was deposited on an ITO substrate using the CBD method. Then, a C10H10N2 film was coated on this CdS film by the spin coating method. The CdS film has n-type semiconductor properties, whereas the C10H10N2 film has p-type semiconductor properties. XRD, SEM, AFM, UV-Vis spectroscopy, and IV measurements were performed on the produced films. According to the XRD result, a sharp peak at 27.07 was observed in the hexagonal phase of CdS. At this angle, a grain size of 33.3 nm was calculated according to the XRD result. Based on the SEM and AFM measurement results, it was determined that the film surface was uniform and dotted. According to the UV-Vis results, in addition to the dd transition, ππ and nπ transitions were also observed. From the I-V diagram, it was seen that the heterojunction structure of the CdSC10H10N2 films had a diode property. The value of rectification factor was calculated as 2.91x102 from the I-V data. In addition, the ideality factor was calculated as 1.93 using the traditional method.

 The aim of this study is to produce a diode, which is a basic electronic circuit element, and analyze its physical characterization. In this study, a diode was produced from CdS and C10H10N2 films, and its structural, optical, and electrical properties were investigated. First, a thin CdS film was deposited on an ITO substrate using the CBD method. Then, a C10H10N2 film was coated on this CdS film by the spin coating method. The CdS film has n-type semiconductor properties, whereas the C10H10N2 film has p-type semiconductor properties. XRD, SEM, AFM, UV-Vis spectroscopy, and IV measurements were performed on the produced films. According to the XRD result, a sharp peak at 27.07 was observed in the hexagonal phase of CdS. At this angle, a grain size of 33.3 nm was calculated according to the XRD result. Based on the SEM and AFM measurement results, it was determined that the film surface was uniform and dotted. According to the UV-Vis results, in addition to the dd transition, ππ and nπ transitions were also observed. From the I-V diagram, it was seen that the heterojunction structure of the CdSC10H10N2 films had a diode property. The value of rectification factor was calculated as 2.91x102 from the I-V data. In addition, the ideality factor was calculated as 1.93 using the traditional method.

 Bu çalışmanın amacı elektronik temel devre elemanı olan bir diyot üretmek ve bununla ilgili olarak fiziksel karakterizasyonunu araştırmaktır. Yapılan bu çalışmada CdS ve C10H10N2 filmlerinden bir diyot üretilerek yapısal, optik ve elektriksel özellikleri incelendi. İlk olarak ITO alttaş üzerine CBD yöntemiyle CdS ince filmi üretildi. Daha sonra bu CdS filmin üzerine spin coating yöntemiyle C10H10N2 filmi kaplandı. CdS filmi n-tipi ve C10H10N2 filmi ise p-tipi yarı iletken özelliğine sahiptir. Üretilen filmlerin XRD, SEM, AFM, UV-Vis Spektroskopi ve IV ölçümleri alındı. XRD sonucuna göre CdSin heksagonal fazda 27,07 de keskin bir pik gözlendi. Bu açıdan tanecik büyüklüğü XRD sonucuna göre 33,3 nm olarak hesaplandı. SEM ve AFM ölçüm sonuçlarına göre düzenli ve boşluklu bir film yüzeyinin olduğu gözlendi. UV-Vis sonucuna göre dd geçişinin yanısıra ππ ve nπ geçişleri de gözlendi. I-V grafiğinden CdSC10H10N2 filmlerinin hetero junction yapısının diyot özelliğine sahip olduğu gözlendi. I-V verilerinden düzeltme faktörünün değeri 2.91x102 olarak hesaplandı ve ilgili grafiği çizildi. Ayrıca idealite faktörü geleneksel yöntemle 1,93 olarak hesaplandı.

Makale detayları

Investigation of Some Properties of 4-Amino-2-Methyl-Quinoline and CdS Nano Composite Thin Films for Production of Diodes

Yazarlar:

Ramazan Demir | İsmet Kaya

Yayıncı:

Afyon Kocatepe University

Ana Başlıklar:

Fotonik | Optoelektronik ve Optik İletişim

Dergi:

Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.24 Issue 6, pp.1297-1304

Belge Tipi:

Makale

Yayın Tarihi:

2/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001330215

pISSN:

2149-3367

Diode

CdS

4-amino-2-methylquinoline

Thin Film

C10H10N2Diyot

CdS

4-amino-2-metilkinolin

İnce Film

C10H10N2

Sayı

Makale detayları

Yazarlar: Ramazan Demir | İsmet Kaya

Yayıncı: Afyon Kocatepe University

Ana Başlıklar: Fotonik | Optoelektronik ve Optik İletişim

Dergi: Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.24 Issue 6, pp.1297-1304

Belge Tipi: Makale

Yayın Tarihi: 2/2024

Belge Dili: İngilizce

Document ID (Org No.): 2001330215

pISSN: 2149-3367

Sayı

Yazarlar:

Ramazan Demir | İsmet Kaya

Yayıncı:

Afyon Kocatepe University

Ana Başlıklar:

Fotonik | Optoelektronik ve Optik İletişim

Dergi:

Afyon Kocatepe Üniversitesi Fen Ve Mühendislik Bilimleri Dergisi Vol.24 Issue 6, pp.1297-1304

Belge Tipi:

Makale

Yayın Tarihi:

2/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001330215

pISSN:

2149-3367