AMPS-1D Modeling of a-Si:H n+-i-n+  Structure: the Validity of Space Charge Limited Current Analysis

A. ERAY; G. NOBILE

Makale detayları

AMPS-1D Modeling of a-Si:H n+-i-n+ Structure: the Validity of Space Charge Limited Current Analysis

Yazarlar:

A. ERAY | G. NOBILE

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2004 Vol.28 Issue 1, pp.31-40

Belge Tipi:

Makale

Yayın Tarihi:

12/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761791

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

In this paper, the AMPS-1D (Analysis of Microelectronic and  photonic structure) simulation program is used to understand the  origin of the differences observed in Space Charge Limited Current  (SCLC) analysis in thin and thick a-Si:H n + -i- n+ structure.   For that purpose, the problem of applicability of SCLC measurements to  n+-i-n+ a-Si:H samples are investigated by using both the thin  (0.3 m m) and thick (3 m m) samples.  The simulation results show  that activation energy in thick samples is larger than in thinner  samples, which are an agreement with the experimental results.  It is  emphasized that this method is highly useful for good quality a-Si:H  samples, even if it is a thin sample, and den Boer analysis gives  correct information about the density of states.  This information  comes from the states in the upper limited part of the gap, as  exhibited by the lower activation energy of thin samples.

 

In this paper, the AMPS-1D (Analysis of Microelectronic and  photonic structure) simulation program is used to understand the  origin of the differences observed in Space Charge Limited Current  (SCLC) analysis in thin and thick a-Si:H n + -i- n+ structure.   For that purpose, the problem of applicability of SCLC measurements to  n+-i-n+ a-Si:H samples are investigated by using both the thin  (0.3 m m) and thick (3 m m) samples.  The simulation results show  that activation energy in thick samples is larger than in thinner  samples, which are an agreement with the experimental results.  It is  emphasized that this method is highly useful for good quality a-Si:H  samples, even if it is a thin sample, and den Boer analysis gives  correct information about the density of states.  This information  comes from the states in the upper limited part of the gap, as  exhibited by the lower activation energy of thin samples.

Makale detayları

AMPS-1D Modeling of a-Si:H n+-i-n+ Structure: the Validity of Space Charge Limited Current Analysis

Yazarlar:

A. ERAY | G. NOBILE

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2004 Vol.28 Issue 1, pp.31-40

Belge Tipi:

Makale

Yayın Tarihi:

12/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761791

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

AMPS-1D

Hydrogenated amorphous silicon

n+-i-n+ structure

SCLC

activation energy

Sayı

Makale detayları

AMPS-1D Modeling of a-Si:H n+-i-n+ Structure: the Validity of Space Charge Limited Current Analysis

Yazarlar: A. ERAY | G. NOBILE

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2004 Vol.28 Issue 1, pp.31-40

Belge Tipi: Makale

Yayın Tarihi: 12/2003

Belge Dili: Türkçe

Document ID (Org No.): 2000761791

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

AMPS-1D

Hydrogenated amorphous silicon

n+-i-n+ structure

SCLC

activation energy

Sayı

Yazarlar:

A. ERAY | G. NOBILE

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2004 Vol.28 Issue 1, pp.31-40

Belge Tipi:

Makale

Yayın Tarihi:

12/2003

Belge Dili:

Türkçe

Document ID (Org No.):

2000761791

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101