Statistical investigation of characteristic parameters for Au/p-TlInS2/n-InP pseudo Schottky junctions produced under the same conditions

Seda Yazıcı; Fatih Aktaş; Ayşe Nida Beştaş; Nezaket Kulakac; Dilek Aslancan; Bahattin Abay

Makale detayları

Statistical investigation of characteristic parameters for Au/p-TlInS2/n-InP pseudo Schottky junctions produced under the same conditions

Yazarlar:

Seda Yazıcı | Fatih Aktaş | Ayşe Nida Beştaş | Nezaket Kulakac | Dilek Aslancan | Bahattin Abay

Yayıncı:

Ataturk University

Ana Başlıklar:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik | Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi:

Journal of Anatolian Physics and Astronomy Vol.3 Issue 1, pp.7-18

Belge Tipi:

Makale

Yayın Tarihi:

6/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001320674

pISSN:

2791-8718

Anahtar kelimeler:

Özet:

 Pseudo-Schottky junctions PSJs on moderately doped MD n-InP were fabricated by introducing a thin p-TlInS2 counter layer before the assembly of gold rectifying contact. Successively annealing treatment was applied to create a stable inversion layer at the metal-semiconductor MS interface. PSJs were made with a significant barrier height BH enhancement, typically by the value of 0.260 eV for gold Schottky gate, after the second annealing process at 200 oC in a nitrogen atmosphere for 5 minutes. Junction parameters such as BH, ideality factor n and serial resistance Rs of identically fabricated 18 dots Aup-TlInS2n-InP PSJs have been computed by thermionic emission TE theory from current-voltage I-V and capacitance-voltage C-V characteristics, at room temperature and in the dark. BHs derived from I-V and C-V characteristics varied from 0.620 to 0.844 eV and 0.669 to 0.973 eV, respectively. In addition, the values of n varied from 1.023 to 1.706 and the serial resistances Rs varied from 28.3 to 131 Ω. Since all parameters of PSJs differ from one junction to another, even if they are prepared under the same conditions, a statistical study was made on the junction parameters using Tungs model. The mean values of the experimental BH, the ideality factor, and the series resistance data, which were fitted by the Gaussian function, were found to be ϕ _I-V0.75 5 0.05 9 eV, ϕ _C-V0.80 3 0.0 78 eV, n 1.3 84 0.1 52 and R_s88.4 2 8.0Ω, respectively. The lateral homogeneous BH ϕ_hom. value of 0.800 eV for the Aup-TlInS2n-InP junctions has been obtained from the ϕ_eff. - n plot by using n_imf.1.006 and Δϕ_imf.18.0 meV It has been seen that the mean BH obtained from the C-V measurements correlates well with the value of ϕ_hom.. The good agreement in these parameters indicates that the BH inhomogeneity observed in the Aup-TlInS2n-InP PJ can be described by considering the spatial distribution hypothesis of BH put forward by Tung.

 Pseudo-Schottky junctions PSJs on moderately doped MD n-InP were fabricated by introducing a thin p-TlInS2 counter layer before the assembly of gold rectifying contact. Successively annealing treatment was applied to create a stable inversion layer at the metal-semiconductor MS interface. PSJs were made with a significant barrier height BH enhancement, typically by the value of 0.260 eV for gold Schottky gate, after the second annealing process at 200 oC in a nitrogen atmosphere for 5 minutes. Junction parameters such as BH, ideality factor n and serial resistance Rs of identically fabricated 18 dots Aup-TlInS2n-InP PSJs have been computed by thermionic emission TE theory from current-voltage I-V and capacitance-voltage C-V characteristics, at room temperature and in the dark. BHs derived from I-V and C-V characteristics varied from 0.620 to 0.844 eV and 0.669 to 0.973 eV, respectively. In addition, the values of n varied from 1.023 to 1.706 and the serial resistances Rs varied from 28.3 to 131 Ω. Since all parameters of PSJs differ from one junction to another, even if they are prepared under the same conditions, a statistical study was made on the junction parameters using Tungs model. The mean values of the experimental BH, the ideality factor, and the series resistance data, which were fitted by the Gaussian function, were found to be ϕ _I-V0.75 5 0.05 9 eV, ϕ _C-V0.80 3 0.0 78 eV, n 1.3 84 0.1 52 and R_s88.4 2 8.0Ω, respectively. The lateral homogeneous BH ϕ_hom. value of 0.800 eV for the Aup-TlInS2n-InP junctions has been obtained from the ϕ_eff. - n plot by using n_imf.1.006 and Δϕ_imf.18.0 meV It has been seen that the mean BH obtained from the C-V measurements correlates well with the value of ϕ_hom.. The good agreement in these parameters indicates that the BH inhomogeneity observed in the Aup-TlInS2n-InP PJ can be described by considering the spatial distribution hypothesis of BH put forward by Tung.

 Pseudo-Schottky junctions PSJs on moderately doped MD n-InP were fabricated by introducing a thin p-TlInS2 counter layer before the assembly of gold rectifying contact. Successively annealing treatment was applied to create a stable inversion layer at the metal-semiconductor MS interface. PSJs were made with a significant barrier height BH enhancement, typically by the value of 0.260 eV for gold Schottky gate, after the second annealing process at 200 oC in a nitrogen atmosphere for 5 minutes. Junction parameters such as BH, ideality factor n and serial resistance Rs of identically fabricated 18 dots Aup-TlInS2n-InP PSJs have been computed by thermionic emission TE theory from current-voltage I-V and capacitance-voltage C-V characteristics, at room temperature and in the dark. BHs derived from I-V and C-V characteristics varied from 0.620 to 0.844 eV and 0.669 to 0.973 eV, respectively. In addition, the values of n varied from 1.023 to 1.706 and the serial resistances Rs varied from 28.3 to 131 Ω. Since all parameters of PSJs differ from one junction to another, even if they are prepared under the same conditions, a statistical study was made on the junction parameters using Tungs model. The mean values of the experimental BH, the ideality factor, and the series resistance data, which were fitted by the Gaussian function, were found to be ϕ _I-V0.75 5 0.05 9 eV, ϕ _C-V0.80 3 0.0 78 eV, n 1.3 84 0.1 52 and R_s88.4 2 8.0Ω, respectively. The lateral homogeneous BH ϕ_hom. value of 0.800 eV for the Aup-TlInS2n-InP junctions has been obtained from the ϕ_eff. - n plot by using n_imf.1.006 and Δϕ_imf.18.0 meV It has been seen that the mean BH obtained from the C-V measurements correlates well with the value of ϕ_hom.. The good agreement in these parameters indicates that the BH inhomogeneity observed in the Aup-TlInS2n-InP PJ can be described by considering the spatial distribution hypothesis of BH put forward by Tung.

 Aup-TlInS2n-InP Psödo-Schottky PS eklemleri, ön yüzüne omik kontak yapılmış n-InP altlığın arka yüzeyine altın Au doğrultucu kontak imalatından önce ince p-TlInS2 inversiyon tabakası büyütülerek üretildi. Metal-yarı iletken arayüzeyinin kararlılığı için ardışık tavlama işlemi uygulandı. Azot gazı atmosferinde 200 oCde 5 dakika süreli ardışık ikinci tavlama işleminden sonra engel yüksekliğinde EY yaklaşık 0,260 eVluk bir artış gözlemlendi. Aynı şartlarda üretilmiş 18 nokta Aup-TlInS2n-InP PS eklemlerinin EY, idealite faktörü n ve seri direnc Rs parametreleri Termiyonik Emisyon TE teorisi kullanılarak oda sıcaklığı ve karanlıkta ölçülmüş akım-voltaj I-V ve kapasite-voltaj C-V karakteristiklerinden hesaplandı. I-V ve C-V karakteristiklerinden hesaplanan EY sırasıyla 0.620-0.844 eV ve 0.669-0.973 eV, idealite faktörü n 1.023-1.706 ve Rs seri direnç değerleri ise 28.3-131 Ω aralığında değişim sergilemektedir. Aynı koşullar altında hazırlanmalarına rağmen PS eklemlerin karakteristik parametreleri kendileri arasında farklılık gösterdiğinden, eklem parametreleri üzerinde Tung modeli kullanılarak istatistiksel bir çalışma yapıldı. Gauss fonksiyonu ile fit edilen EY, n ve Rs verilerinin ortalama değerleri sırasıyla ϕ _I-V0.75 5 0.05 9 eV, ϕ _C-V0.80 3 0.0 78 eV, n 1.3 84 0.1 52 andR_s88.4 2 8.0Ω olarak elde edildi. Aup-TlInS2n-InP PS eklemi için yanal homojen EY ϕ_hom., n_imf.1.006 ve Δϕ_imf.18.0 meV değerleri kullanılarak ϕ_eff. - n çiziminden ϕ_hom.0.800 eV olarak elde edilmiştir. C-V ölçümlerinden elde edilen ortalama EY değeri ϕ_hom. ile oldukça uyum içindedir. Parametrelerdeki bu uyum, Aup-TlInS2n-InP PS ekleminde gözlenen EY inhomojenliğinin Tung tarafından ileri sürülen EYnin uzaysal dağılımı hipotezi dikkate alınarak açıklanabileceğini gösterir.

Makale detayları

Statistical investigation of characteristic parameters for Au/p-TlInS2/n-InP pseudo Schottky junctions produced under the same conditions

Yazarlar:

Seda Yazıcı | Fatih Aktaş | Ayşe Nida Beştaş | Nezaket Kulakac | Dilek Aslancan | Bahattin Abay

Yayıncı:

Ataturk University

Ana Başlıklar:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik | Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi:

Journal of Anatolian Physics and Astronomy Vol.3 Issue 1, pp.7-18

Belge Tipi:

Makale

Yayın Tarihi:

6/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001320674

pISSN:

2791-8718

n-InP

p-TlInS2

pseudo-Schottky junction

I-V and C-V measurement

barrier inhomogeneities

Tung’s modeln-InP

p-TlInS2

pseudo Schottky eklem

I-V and C-V ölçümü

engel inhomojenliği

Tung modeli

Sayı

Makale detayları

Yazarlar: Seda Yazıcı | Fatih Aktaş | Ayşe Nida Beştaş | Nezaket Kulakac | Dilek Aslancan | Bahattin Abay

Yayıncı: Ataturk University

Ana Başlıklar: Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik | Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi: Journal of Anatolian Physics and Astronomy Vol.3 Issue 1, pp.7-18

Belge Tipi: Makale

Yayın Tarihi: 6/2024

Belge Dili: İngilizce

Document ID (Org No.): 2001320674

pISSN: 2791-8718

Sayı

Yazarlar:

Seda Yazıcı | Fatih Aktaş | Ayşe Nida Beştaş | Nezaket Kulakac | Dilek Aslancan | Bahattin Abay

Yayıncı:

Ataturk University

Ana Başlıklar:

Yoğun Maddenin Elektronik ve Manyetik Özellikleri; Süperiletkenlik | Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi:

Journal of Anatolian Physics and Astronomy Vol.3 Issue 1, pp.7-18

Belge Tipi:

Makale

Yayın Tarihi:

6/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001320674

pISSN:

2791-8718