On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Abdulmecit TÜRÜT

Makale detayları

On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Yazarlar:

Abdulmecit TÜRÜT

Yayıncı:

TUBITAK

Ana Başlıklar:

Fizik

Dergi:

Turkish Journal of Physics 2020 Vol.44 Issue 4, pp.302-347

Belge Tipi:

Makale

Yayın Tarihi:

8/2020

Belge Dili:

İngilizce

Document ID (Org No.):

2000758786

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Özet:

 

It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as “patches” with low barrier placed in a higher uniform barrier area.

Makale detayları

On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Yazarlar: Abdulmecit TÜRÜT

Yayıncı: TUBITAK

Ana Başlıklar: Fizik

Dergi: Turkish Journal of Physics 2020 Vol.44 Issue 4, pp.302-347

Belge Tipi: Makale

Yayın Tarihi: 8/2020

Belge Dili: İngilizce

Document ID (Org No.): 2000758786

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Sayı

Yazarlar:

Abdulmecit TÜRÜT

Yayıncı:

TUBITAK

Ana Başlıklar:

Fizik

Dergi:

Turkish Journal of Physics 2020 Vol.44 Issue 4, pp.302-347

Belge Tipi:

Makale

Yayın Tarihi:

8/2020

Belge Dili:

İngilizce

Document ID (Org No.):

2000758786

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101