Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese

Bekir Gürbulak

Makale detayları

Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese

Yazarlar:

Bekir Gürbulak

Yayıncı:

Ataturk University

Ana Başlıklar:

Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi:

Journal of Anatolian Physics and Astronomy Vol.3 Issue 2, pp.44-51

Belge Tipi:

Makale

Yayın Tarihi:

12/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001333064

pISSN:

2791-8718

Anahtar kelimeler:

Özet:

 Scientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology. Indium and selenium were synthesised from elements in stoichiometric ratios and doped with manganese. InSe and InSe:Mn single crystals were successfully grown by BridgmanStockbarger crystal growth method. Since the surfaces of the grown samples do not contain contamination, chemical contamination was not caused by chemical treatment. Since the grown semiconductors have a layered structure, the samples were easily prepared for characteristic analyses along the 001 planes. The structure of the InSe and InSe:Mn semiconductors was analysed using x-ray diffractometer, scanning electron microscopy and energy dispersive X-ray techniques. An important study has been conducted on the structural properties of InSe and InSe:Mn semiconductors grown with the modified BridgmanStockbarger technique. The hexagonal structure of the InSe semiconductor with lattice parameters a  b  4,025 Å and c  16,732 Å was confirmed with the help of X-ray diffraction. III-VI semiconductors are used in visible and infrared light emitting diodes, infrared detectors, converters, amplifiers, optical parameter oscillators and far infrared generators.

 Scientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology. Indium and selenium were synthesised from elements in stoichiometric ratios and doped with manganese. InSe and InSe:Mn single crystals were successfully grown by BridgmanStockbarger crystal growth method. Since the surfaces of the grown samples do not contain contamination, chemical contamination was not caused by chemical treatment. Since the grown semiconductors have a layered structure, the samples were easily prepared for characteristic analyses along the 001 planes. The structure of the InSe and InSe:Mn semiconductors was analysed using x-ray diffractometer, scanning electron microscopy and energy dispersive X-ray techniques. An important study has been conducted on the structural properties of InSe and InSe:Mn semiconductors grown with the modified BridgmanStockbarger technique. The hexagonal structure of the InSe semiconductor with lattice parameters a  b  4,025 Å and c  16,732 Å was confirmed with the help of X-ray diffraction. III-VI semiconductors are used in visible and infrared light emitting diodes, infrared detectors, converters, amplifiers, optical parameter oscillators and far infrared generators.

 Scientific studies on binary semiconductors have been going on for half a century. The growth and research of semiconductors have contributed greatly to the advancement of semiconductor technology. Indium and selenium were synthesised from elements in stoichiometric ratios and doped with manganese. InSe and InSe:Mn single crystals were successfully grown by BridgmanStockbarger crystal growth method. Since the surfaces of the grown samples do not contain contamination, chemical contamination was not caused by chemical treatment. Since the grown semiconductors have a layered structure, the samples were easily prepared for characteristic analyses along the 001 planes. The structure of the InSe and InSe:Mn semiconductors was analysed using x-ray diffractometer, scanning electron microscopy and energy dispersive X-ray techniques. An important study has been conducted on the structural properties of InSe and InSe:Mn semiconductors grown with the modified BridgmanStockbarger technique. The hexagonal structure of the InSe semiconductor with lattice parameters a  b  4,025 Å and c  16,732 Å was confirmed with the help of X-ray diffraction. III-VI semiconductors are used in visible and infrared light emitting diodes, infrared detectors, converters, amplifiers, optical parameter oscillators and far infrared generators.

 İkili yarıiletkenler üzerine yapılan bilimsel çalışmalar yarım asırdır devam etmektedir. Yarıiletkenlerin, büyütülmesi ve araştırılması yarıiletken teknolojisinin ilerlemesine büyük katkı sağlamıştır. İndiyum ve selenyum elementlerden stokiyometrik oranlarda sentezlenmiş ve manganez katkılanmıştır. InSe ve InSe:Mn tek kristalleri, BridgmanStockbarger kristal büyütme yöntemiyle başarıyla büyütülmüştür. Büyütülen numunelerin yüzeyleri kontaminasyon içermediğinden kimyasal işleme tabi tutulmayarak kimyasal kirlenmeye sebep olunmamıştır. Büyütülen yarıiletkenler tabakalı bir yapıya sahip olduğundan, numuneler kolayca 001 düzlemleri boyunca karakteristik analizler için hazırlanmıştır. InSe ve InSe:Mn yarı iletkenlerinin yapısı X-ışını difraktometresi, taramalı elektron mikroskobu ve enerji dağılımlı x-ışını teknikleri kullanılarak analiz edilmiştir.

Makale detayları

Structural Characterisation of Grown InSe:Mn Semiconductors and Effect of Doped Manganese

Yazarlar:

Bekir Gürbulak

Yayıncı:

Ataturk University

Ana Başlıklar:

Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi:

Journal of Anatolian Physics and Astronomy Vol.3 Issue 2, pp.44-51

Belge Tipi:

Makale

Yayın Tarihi:

12/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001333064

pISSN:

2791-8718

Crystal Growth

InSe

InSe:Mn

Bridgman/Stockbarger MethodKristal Büyütme

InSe

InSe:Mn

Bridgman/Stockbarger Yöntemi

Sayı

Makale detayları

Yazarlar: Bekir Gürbulak

Yayıncı: Ataturk University

Ana Başlıklar: Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi: Journal of Anatolian Physics and Astronomy Vol.3 Issue 2, pp.44-51

Belge Tipi: Makale

Yayın Tarihi: 12/2024

Belge Dili: İngilizce

Document ID (Org No.): 2001333064

pISSN: 2791-8718

Sayı

Yazarlar:

Bekir Gürbulak

Yayıncı:

Ataturk University

Ana Başlıklar:

Yoğun Maddenin Yapısal Özellikleri | Yoğun Maddenin Yüzey Özellikleri

Dergi:

Journal of Anatolian Physics and Astronomy Vol.3 Issue 2, pp.44-51

Belge Tipi:

Makale

Yayın Tarihi:

12/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001333064

pISSN:

2791-8718