Well-width dependence of warm electron relaxation and interface roughness scattering in GaAs/Ga1-xAlxAs multiple quantum wells

M. CANKURTARAN; H. ÇELİK; E. TIRAŞ and A. BAYRAKLI

Makale detayları

Well-width dependence of warm electron relaxation and interface roughness scattering in GaAs/Ga1-xAlxAs multiple quantum wells

Yazarlar:

M. CANKURTARAN | H. ÇELİK | E. TIRAŞ and A. BAYRAKLI

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 1999 Vol.23 Issue 4, pp.565-576

Belge Tipi:

Makale

Yayın Tarihi:

3/1999

Belge Dili:

Türkçe

Document ID (Org No.):

2000762985

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

We review our recent results concerning the well-width  dependence of the acoustic-phonon-assisted energy relaxation of  two-dimensional (2D) warm electrons in modulation-doped  GaAs/Ga1-xAlxAs multiple quantum wells.  Electron energy-loss  rates via the emission of acoustic phonons are determined from the  amplitude of Shubnikov-de Haas (SdH) oscillations, measured as a  function of lattice temperature and applied electric field.   Experimental results are compared with the existing theoretical models  that involve deformation-potential and screened and unscreened  piezoelectric scattering.  Well-width dependence of the quantum and transport mobilities of 2D   electrons in the same samples have also been determined by measuring   the quantum oscillations in both the magnetoresistance and Hall   resistance. Our results confirm earlier independent conclusions that   the momentum relaxation in GaAs/Ga1-xAlxAs multiple quantum wells is limited mainly by interface roughness scattering. A new theoretical   modelling has been proposed and used  to estimate the interface   roughness parameters from the measured  quantum and transport   mobilities of 2D electrons.

 

We review our recent results concerning the well-width  dependence of the acoustic-phonon-assisted energy relaxation of  two-dimensional (2D) warm electrons in modulation-doped  GaAs/Ga1-xAlxAs multiple quantum wells.  Electron energy-loss  rates via the emission of acoustic phonons are determined from the  amplitude of Shubnikov-de Haas (SdH) oscillations, measured as a  function of lattice temperature and applied electric field.   Experimental results are compared with the existing theoretical models  that involve deformation-potential and screened and unscreened  piezoelectric scattering.  Well-width dependence of the quantum and transport mobilities of 2D   electrons in the same samples have also been determined by measuring   the quantum oscillations in both the magnetoresistance and Hall   resistance. Our results confirm earlier independent conclusions that   the momentum relaxation in GaAs/Ga1-xAlxAs multiple quantum wells is limited mainly by interface roughness scattering. A new theoretical   modelling has been proposed and used  to estimate the interface   roughness parameters from the measured  quantum and transport   mobilities of 2D electrons.

Makale detayları

Well-width dependence of warm electron relaxation and interface roughness scattering in GaAs/Ga1-xAlxAs multiple quantum wells

Yazarlar:

M. CANKURTARAN | H. ÇELİK | E. TIRAŞ and A. BAYRAKLI

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 1999 Vol.23 Issue 4, pp.565-576

Belge Tipi:

Makale

Yayın Tarihi:

3/1999

Belge Dili:

Türkçe

Document ID (Org No.):

2000762985

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Turk. J. Phys.

23

(1999)

565-576. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.23

iss.4.

Sayı

Makale detayları

Well-width dependence of warm electron relaxation and interface roughness scattering in GaAs/Ga1-xAlxAs multiple quantum wells

Yazarlar: M. CANKURTARAN | H. ÇELİK | E. TIRAŞ and A. BAYRAKLI

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 1999 Vol.23 Issue 4, pp.565-576

Belge Tipi: Makale

Yayın Tarihi: 3/1999

Belge Dili: Türkçe

Document ID (Org No.): 2000762985

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Turk. J. Phys.

23

(1999)

565-576. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.23

iss.4.

Sayı

Yazarlar:

M. CANKURTARAN | H. ÇELİK | E. TIRAŞ and A. BAYRAKLI

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 1999 Vol.23 Issue 4, pp.565-576

Belge Tipi:

Makale

Yayın Tarihi:

3/1999

Belge Dili:

Türkçe

Document ID (Org No.):

2000762985

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101