Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

Neslihan Delen; İlke Taşçıoğlu; Seçkin Altındal Yerişkin; Akif Özbay

Makale detayları

Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

Yazarlar:

Neslihan Delen | İlke Taşçıoğlu | Seçkin Altındal Yerişkin | Akif Özbay

Yayıncı:

Gazi University

Ana Başlıklar:

Engineering

Dergi:

Gazi University Journal of Science Vol.37 Issue 1, pp.457-463

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001300206

pISSN:

2147-1762

Anahtar kelimeler:

Özet:

 In this work, the main electronic parameters of the performed Al-CdxZn1-xO-pSi MetalInterface-layerSemiconductor MIS type Schottky Diodes SDs were investigated by utilizing IV characteristics at 300 K. The CdxZn1-xO interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factorn, potential barrier ФBo, Rs, shunt resistance Rsh, and rectification rate RR IforwardIreverse values were calculated based on thermionic emission TE theory and Cheung function between -4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height BH, ФBo, and RR changed from 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong functions of voltage, calculation method, and the doping rate of the Cadminium Cd interfacial layer. The best ratio for Cd: ZnO was determined to be 30; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of MetalSemiconductor MS type SDs.

 In this work, the main electronic parameters of the performed Al-CdxZn1-xO-pSi MetalInterface-layerSemiconductor MIS type Schottky Diodes SDs were investigated by utilizing IV characteristics at 300 K. The CdxZn1-xO interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factorn, potential barrier ФBo, Rs, shunt resistance Rsh, and rectification rate RR IforwardIreverse values were calculated based on thermionic emission TE theory and Cheung function between -4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height BH, ФBo, and RR changed from 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong functions of voltage, calculation method, and the doping rate of the Cadminium Cd interfacial layer. The best ratio for Cd: ZnO was determined to be 30; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of MetalSemiconductor MS type SDs.

 In this work, the main electronic parameters of the performed Al-CdxZn1-xO-pSi MetalInterface-layerSemiconductor MIS type Schottky Diodes SDs were investigated by utilizing IV characteristics at 300 K. The CdxZn1-xO interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factorn, potential barrier ФBo, Rs, shunt resistance Rsh, and rectification rate RR IforwardIreverse values were calculated based on thermionic emission TE theory and Cheung function between -4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height BH, ФBo, and RR changed from 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong functions of voltage, calculation method, and the doping rate of the Cadminium Cd interfacial layer. The best ratio for Cd: ZnO was determined to be 30; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of MetalSemiconductor MS type SDs.

 In this work, the main electronic parameters of the performed Al-CdxZn1-xO-pSi MetalInterface-layerSemiconductor MIS type Schottky Diodes SDs were investigated by utilizing IV characteristics at 300 K. The CdxZn1-xO interfacial layer was grown on the pSi wafer by utilizing the sol-gel technique. Ideality-factorn, potential barrier ФBo, Rs, shunt resistance Rsh, and rectification rate RR IforwardIreverse values were calculated based on thermionic emission TE theory and Cheung function between -4.5V and 4.5V. There parameters also varied for the samples with different doping ratios. Energy-dependent surface state profiles of them were also extracted from the forward bias IV data, and their magnitude was found on the order of 1012eV-1.cm-2 which is very appropriate for the MIS type SD. The values of n, barrier height BH, ФBo, and RR changed from 4.347, 0.582 eV, 5.74x103 to 5.293, 0.607 eV, 2.83x106. These results show that electronic parameters of these SDs are a strong functions of voltage, calculation method, and the doping rate of the Cadminium Cd interfacial layer. The best ratio for Cd: ZnO was determined to be 30; therefore, this interfacial layer may be used instead of traditional insulator layers to enhance the quality of MetalSemiconductor MS type SDs.

Makale detayları

Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

Yazarlar:

Neslihan Delen | İlke Taşçıoğlu | Seçkin Altındal Yerişkin | Akif Özbay

Yayıncı:

Gazi University

Ana Başlıklar:

Engineering

Dergi:

Gazi University Journal of Science Vol.37 Issue 1, pp.457-463

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001300206

pISSN:

2147-1762

Comparative basic electrical parameters

I-V features and basic electrical parameters

The sources of interface trapsComparative basic electrical parameters; I-V features and basic electrical parameters The sources of interface traps

Comparative basic electrical parameters

I-V features and basic electrical parameters

The sources of interface traps

Sayı

Makale detayları

Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

Yazarlar: Neslihan Delen | İlke Taşçıoğlu | Seçkin Altındal Yerişkin | Akif Özbay

Yayıncı: Gazi University

Ana Başlıklar: Engineering

Dergi: Gazi University Journal of Science Vol.37 Issue 1, pp.457-463

Belge Tipi: Makale

Yayın Tarihi: 1/2024

Belge Dili: İngilizce

Document ID (Org No.): 2001300206

pISSN: 2147-1762

Comparative basic electrical parameters

I-V features and basic electrical parameters

The sources of interface trapsComparative basic electrical parameters; I-V features and basic electrical parameters The sources of interface traps

Comparative basic electrical parameters

I-V features and basic electrical parameters

The sources of interface traps

Sayı

Yazarlar:

Neslihan Delen | İlke Taşçıoğlu | Seçkin Altındal Yerişkin | Akif Özbay

Yayıncı:

Gazi University

Ana Başlıklar:

Engineering

Dergi:

Gazi University Journal of Science Vol.37 Issue 1, pp.457-463

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001300206

pISSN:

2147-1762