Investigation of Structural, Optical and Electrical Properties of Al0.3Ga0.7N/GaN HEMT Grown by MOCVD

Ömer AKPINAR; Ahmet Kürşat BİLGİLİ; Mustafa Kemal ÖZTÜRK; Süleyman ÖZÇELİK; Ekmel ÖZBAY

doi:https://doi.org/10.2339/politeknik.583898

Makale detayları

Investigation of Structural, Optical and Electrical Properties of Al0.3Ga0.7N/GaN HEMT Grown by MOCVD

Yazarlar:

Ömer AKPINAR | Ahmet Kürşat BİLGİLİ | Mustafa Kemal ÖZTÜRK | Süleyman ÖZÇELİK | Ekmel ÖZBAY

Yayıncı:

Gazi University

Ana Başlıklar:

Uygulamalı fizik

Dergi:

Journal of Polytechnic 2020 Vol.23 Issue 3, pp.687-696

Belge Tipi:

Makale

Yayın Tarihi:

8/2020

Belge Dili:

İngilizce

Document ID (Org No.):

2000589575

Sıklık:

Aylık

eISSN:

2147-9429

DOI:

https://doi.org/10.2339/politeknik.583898

Özet:

 


In this study, Al0.3Ga0.7N/GaN
high electron mobility transistor (HEMT) structure is investigated grown over
c- oriented sapphire substrate by using Metal Organic Chemical Vapor Deposition
(MOCVD) method. Structural, optical, morphological and electrical
characteristics of this structure are determined by X-ray diffraction (XRD), Photoluminescence (PL), Ultraviolet (UV-Vis.), Atomic Force Microscopy
(AFM) and Hall- Resistivity measurements. By using XRD method, 2θ, Full Width
at Half Maximun (FWHM), lattice parameters, crystallite size, strain, stress
and dislocation values are calculated on symmetric and asymmetric planes.
Direct band gap of GaN is determined by PL measurements as 3.24 eV. It is seen
that conduction of AlGaN layer starts at 360 nm in UV-Vis. In Hall-Resistivity
measurements, it is noticed that carrier density of HEMT structure is not
effected by temperature and mobility value is high. Carrier density and
mobility values are determined as 5.82x1015 1/cm3 and
1198 cm2/V.s at room temperature, respectively. At the lowest temperature
point (25 K) they are calculated as 5.19x1015 1/cm3 and
6579 cm2/Vs, respectively.


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Makale detayları

Investigation of Structural, Optical and Electrical Properties of Al0.3Ga0.7N/GaN HEMT Grown by MOCVD

Yazarlar: Ömer AKPINAR | Ahmet Kürşat BİLGİLİ | Mustafa Kemal ÖZTÜRK | Süleyman ÖZÇELİK | Ekmel ÖZBAY

Yayıncı: Gazi University

Ana Başlıklar: Uygulamalı fizik

Dergi: Journal of Polytechnic 2020 Vol.23 Issue 3, pp.687-696

Belge Tipi: Makale

Yayın Tarihi: 8/2020

Belge Dili: İngilizce

Document ID (Org No.): 2000589575

Sıklık: Aylık

eISSN: 2147-9429

DOI: https://doi.org/10.2339/politeknik.583898

Sayı

Yazarlar:

Ömer AKPINAR | Ahmet Kürşat BİLGİLİ | Mustafa Kemal ÖZTÜRK | Süleyman ÖZÇELİK | Ekmel ÖZBAY

Yayıncı:

Gazi University

Ana Başlıklar:

Uygulamalı fizik

Dergi:

Journal of Polytechnic 2020 Vol.23 Issue 3, pp.687-696

Belge Tipi:

Makale

Yayın Tarihi:

8/2020

Belge Dili:

İngilizce

Document ID (Org No.):

2000589575

Sıklık:

Aylık

eISSN:

2147-9429

DOI:

https://doi.org/10.2339/politeknik.583898