H2 Gas Response of NiO Thin Film at Different Gas Concentrations

Betül Ceviz Şakar

Makale detayları

H2 Gas Response of NiO Thin Film at Different Gas Concentrations

Yazarlar:

Betül Ceviz Şakar

Yayıncı:

Bingol University

Ana Başlıklar:

Yoğun Maddenin Yüzey Özellikleri

Dergi:

Türk Doğa ve Fen Dergisi Issue 1, pp.77-81

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001328981

pISSN:

2149-6366

Anahtar kelimeler:

Özet:

 Interest in H2 energy, which is one of the alternative energy sources that can meet the energy needs of the increasing world population, is increasing day by day. However, dangerous properties of H2 gas such as high flammability and explosiveness require sensitive detection of this gas. For this purpose, intensive research is being carried out on the detection of H2 gas with high response values at low gas concentrations. In this study, the structural, morphological and H2 gas sensing characteristics of NiO thin film, which grown on quartz substrate by RF sputtering. XRD results of the produced film revealed that the NiO film has a polycrystalline cubic structure with 101, 012, 110 and 113 diffraction planes. The lattice constant of the film was obtained as 4.226 nm, which differed by 1.274 from the theoretical values presented in the literature. From the special scanning XPS spectrum of the Ni element, the presence of peaks corresponding to Ni2, Ni3 and NiOOH on the film surface was detected. SEM images revealed the existence of a homogeneous structure on the film surface consisting of structures with grain sizes of 10-20 nm. Current changes obtained at 100, 500 and 1000 ppm H2 concentrations at 300C showed that the produced film was sensitive to H2 gas and the current value increased as the ppm value increased. For 1000 ppm H2, the response value was 11.49, the response and recovery times were 239 and 286 seconds, respectively. Gas sensor measurements have also shown that the NiO film produced may have p-type conductivity.

 Interest in H2 energy, which is one of the alternative energy sources that can meet the energy needs of the increasing world population, is increasing day by day. However, dangerous properties of H2 gas such as high flammability and explosiveness require sensitive detection of this gas. For this purpose, intensive research is being carried out on the detection of H2 gas with high response values at low gas concentrations. In this study, the structural, morphological and H2 gas sensing characteristics of NiO thin film, which grown on quartz substrate by RF sputtering. XRD results of the produced film revealed that the NiO film has a polycrystalline cubic structure with 101, 012, 110 and 113 diffraction planes. The lattice constant of the film was obtained as 4.226 nm, which differed by 1.274 from the theoretical values presented in the literature. From the special scanning XPS spectrum of the Ni element, the presence of peaks corresponding to Ni2, Ni3 and NiOOH on the film surface was detected. SEM images revealed the existence of a homogeneous structure on the film surface consisting of structures with grain sizes of 10-20 nm. Current changes obtained at 100, 500 and 1000 ppm H2 concentrations at 300C showed that the produced film was sensitive to H2 gas and the current value increased as the ppm value increased. For 1000 ppm H2, the response value was 11.49, the response and recovery times were 239 and 286 seconds, respectively. Gas sensor measurements have also shown that the NiO film produced may have p-type conductivity.

 Interest in H2 energy, which is one of the alternative energy sources that can meet the energy needs of the increasing world population, is increasing day by day. However, dangerous properties of H2 gas such as high flammability and explosiveness require sensitive detection of this gas. For this purpose, intensive research is being carried out on the detection of H2 gas with high response values at low gas concentrations. In this study, the structural, morphological and H2 gas sensing characteristics of NiO thin film, which grown on quartz substrate by RF sputtering. XRD results of the produced film revealed that the NiO film has a polycrystalline cubic structure with 101, 012, 110 and 113 diffraction planes. The lattice constant of the film was obtained as 4.226 nm, which differed by 1.274 from the theoretical values presented in the literature. From the special scanning XPS spectrum of the Ni element, the presence of peaks corresponding to Ni2, Ni3 and NiOOH on the film surface was detected. SEM images revealed the existence of a homogeneous structure on the film surface consisting of structures with grain sizes of 10-20 nm. Current changes obtained at 100, 500 and 1000 ppm H2 concentrations at 300C showed that the produced film was sensitive to H2 gas and the current value increased as the ppm value increased. For 1000 ppm H2, the response value was 11.49, the response and recovery times were 239 and 286 seconds, respectively. Gas sensor measurements have also shown that the NiO film produced may have p-type conductivity.

 Artan dünya nüfusunun enerji ihtiyacını karşılayabilecek alternatif enerji kaynaklarından biri olan H2 enerjisine olan ilgi her geçen gün artmaktadır. Ancak H2 gazının yüksek yanıcılık ve patlayıcılık gibi tehlikeli özellikleri bu gazın hassas bir şekilde tespit edilmesini gerektirmektedir. Bu amaçla düşük gaz konsantrasyonlarında yüksek tepki değerlerine sahip H2 gazının tespiti üzerine yoğun araştırmalar yürütülmektedir. Bu çalışmada RF sıçratma yöntemiyle kuvars alttaş üzerinde büyütülen NiO ince filmin yapısal, morfolojik ve H2 gazını algılama özellikleri incelenmiştir. Üretilen filmin XRD sonuçları, NiO filminin 101, 012, 110 ve 113 kırınım düzlemlerine sahip çok kristalli kübik bir yapıya sahip olduğunu ortaya çıkardı. Filmin örgü sabiti 4,226 nm olarak elde edildi ve bu değer literatürde sunulan teorik değerlerden 1,274 farklılık gösterdi. Ni elementinin özel taramalı XPS spektrumundan film yüzeyinde Ni2, Ni3 ve NiOOHye karşılık gelen piklerin varlığı tespit edildi. SEM görüntüleri, film yüzeyinde tane boyutları 10-20 nm olan yapılardan oluşan homojen bir yapının varlığını ortaya çıkardı. 300Cde 100, 500 ve 1000 ppm H2 konsantrasyonlarında elde edilen akım değişimleri, üretilen filmin H2 gazına duyarlı olduğunu ve ppm değeri arttıkça akım değerinin arttığını göstermiştir. 1000 ppm H2 için yanıt değeri 11,49, yanıt ve iyileşme süreleri sırasıyla 239 ve 286 saniyeydi. Gaz sensörü ölçümleri ayrıca üretilen NiO filmin p tipi iletkenliğe sahip olabileceğini de göstermiştir.

Makale detayları

H2 Gas Response of NiO Thin Film at Different Gas Concentrations

Yazarlar:

Betül Ceviz Şakar

Yayıncı:

Bingol University

Ana Başlıklar:

Yoğun Maddenin Yüzey Özellikleri

Dergi:

Türk Doğa ve Fen Dergisi Issue 1, pp.77-81

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001328981

pISSN:

2149-6366

NiO

XRD

XPS

H2

Gas sensorNiO

XRD

XPS

H2

Gaz sensör

Sayı

Makale detayları

Yazarlar: Betül Ceviz Şakar

Yayıncı: Bingol University

Ana Başlıklar: Yoğun Maddenin Yüzey Özellikleri

Dergi: Türk Doğa ve Fen Dergisi Issue 1, pp.77-81

Belge Tipi: Makale

Yayın Tarihi: 1/2024

Belge Dili: İngilizce

Document ID (Org No.): 2001328981

pISSN: 2149-6366

Sayı

Yazarlar:

Betül Ceviz Şakar

Yayıncı:

Bingol University

Ana Başlıklar:

Yoğun Maddenin Yüzey Özellikleri

Dergi:

Türk Doğa ve Fen Dergisi Issue 1, pp.77-81

Belge Tipi:

Makale

Yayın Tarihi:

1/2024

Belge Dili:

İngilizce

Document ID (Org No.):

2001328981

pISSN:

2149-6366