Built-in Potential Measurements in a-Si:H p-i-n Solar Cells

Ruhi KAPLAN

Makale detayları

Built-in Potential Measurements in a-Si:H p-i-n Solar Cells

Yazarlar:

Ruhi KAPLAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2001 Vol.25 Issue 4, pp.375-383

Belge Tipi:

Makale

Yayın Tarihi:

3/2001

Belge Dili:

Türkçe

Document ID (Org No.):

2000762427

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

73.50.Pz; 72.80.Ng;/photovoltaic effects; amorphous thin films; built-in potentials

Özet:

 

We have measured the open-circuit voltage  Voc  and the short-circuit  current density  Jsc  of amorphous silicon (a-Si:H) p-i-n solar cells  deposited by radio-frequency plasma-enhanced chemical vapor deposition  (RF-PECVD) at different monochromatic illuminations, and temperatures. From the  measurements, the built-in potential  Vbi  was determined by using two  different methods: activation energy and differential temperature. The results  from both methods were analyzed and compared as a function of excitation  wavelength. It was observed that there is good agreement between the two  methods. We found that  Vbi  increases until about 650 nm, and then  decreases with increasing wavelength. This behaviour is explained and  interpreted in different ways.

 

We have measured the open-circuit voltage  Voc  and the short-circuit  current density  Jsc  of amorphous silicon (a-Si:H) p-i-n solar cells  deposited by radio-frequency plasma-enhanced chemical vapor deposition  (RF-PECVD) at different monochromatic illuminations, and temperatures. From the  measurements, the built-in potential  Vbi  was determined by using two  different methods: activation energy and differential temperature. The results  from both methods were analyzed and compared as a function of excitation  wavelength. It was observed that there is good agreement between the two  methods. We found that  Vbi  increases until about 650 nm, and then  decreases with increasing wavelength. This behaviour is explained and  interpreted in different ways.

Makale detayları

Built-in Potential Measurements in a-Si:H p-i-n Solar Cells

Yazarlar: Ruhi KAPLAN

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2001 Vol.25 Issue 4, pp.375-383

Belge Tipi: Makale

Yayın Tarihi: 3/2001

Belge Dili: Türkçe

Document ID (Org No.): 2000762427

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

73.50.Pz; 72.80.Ng;/photovoltaic effects; amorphous thin films; built-in potentials

Sayı

Yazarlar:

Ruhi KAPLAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2001 Vol.25 Issue 4, pp.375-383

Belge Tipi:

Makale

Yayın Tarihi:

3/2001

Belge Dili:

Türkçe

Document ID (Org No.):

2000762427

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101