Prediction of some mechanical and vibrational properties of GaX (X = P, As, Sb) semiconductor compounds

Anil Ratilal Jivani And Ashvinkumar Ramn JANI

Makale detayları

Prediction of some mechanical and vibrational properties of GaX (X = P, As, Sb) semiconductor compounds

Yazarlar:

Anil Ratilal Jivani And Ashvinkumar Ramn JANI

Yayıncı:

TUBITAK

Ana Başlıklar:

Fizik

Dergi:

Turkish Journal of Physics 2012 Vol.36 Issue 2, pp.215-223

Belge Tipi:

Makale

Yayın Tarihi:

1/2012

Belge Dili:

İngilizce

Document ID (Org No.):

2000760418

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

The static elastic constants (C11, C12 and C44), pressure   derivative of elastic constants, pressure derivative of bulk modulus,   propagation velocities of longitudinal and transverse waves in [100], [110]   and [111] directions and Young modulus are investigated through computations   using the higher-order perturbation theory based on pseudopotential   formalism, in which we have applied our own proposed model potential for   GaP, GaAs and GaSb semiconductor compounds. In the present calculations, two   local-field correction functions are employed to consider exchange and   correlation effects. The numerical values of the aforesaid properties are   found to be sensitive to the selection of the local-field correction   function and showing a significant variation with the change in the   function. The presently investigated numerical data is found to have, in   general, good agreement with the available experiment data and other such   theoretical values.

 

The static elastic constants (C11, C12 and C44), pressure   derivative of elastic constants, pressure derivative of bulk modulus,   propagation velocities of longitudinal and transverse waves in [100], [110]   and [111] directions and Young modulus are investigated through computations   using the higher-order perturbation theory based on pseudopotential   formalism, in which we have applied our own proposed model potential for   GaP, GaAs and GaSb semiconductor compounds. In the present calculations, two   local-field correction functions are employed to consider exchange and   correlation effects. The numerical values of the aforesaid properties are   found to be sensitive to the selection of the local-field correction   function and showing a significant variation with the change in the   function. The presently investigated numerical data is found to have, in   general, good agreement with the available experiment data and other such   theoretical values.

Makale detayları

Prediction of some mechanical and vibrational properties of GaX (X = P, As, Sb) semiconductor compounds

Yazarlar:

Anil Ratilal Jivani And Ashvinkumar Ramn JANI

Yayıncı:

TUBITAK

Ana Başlıklar:

Fizik

Dergi:

Turkish Journal of Physics 2012 Vol.36 Issue 2, pp.215-223

Belge Tipi:

Makale

Yayın Tarihi:

1/2012

Belge Dili:

İngilizce

Document ID (Org No.):

2000760418

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Semiconductor compound

pseudopotential method

elastic constant

pressure derivative of bulk modulus

pressure derivative of elastic constants

Sayı

Makale detayları

Prediction of some mechanical and vibrational properties of GaX (X = P, As, Sb) semiconductor compounds

Yazarlar: Anil Ratilal Jivani And Ashvinkumar Ramn JANI

Yayıncı: TUBITAK

Ana Başlıklar: Fizik

Dergi: Turkish Journal of Physics 2012 Vol.36 Issue 2, pp.215-223

Belge Tipi: Makale

Yayın Tarihi: 1/2012

Belge Dili: İngilizce

Document ID (Org No.): 2000760418

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Semiconductor compound

pseudopotential method

elastic constant

pressure derivative of bulk modulus

pressure derivative of elastic constants

Sayı

Yazarlar:

Anil Ratilal Jivani And Ashvinkumar Ramn JANI

Yayıncı:

TUBITAK

Ana Başlıklar:

Fizik

Dergi:

Turkish Journal of Physics 2012 Vol.36 Issue 2, pp.215-223

Belge Tipi:

Makale

Yayın Tarihi:

1/2012

Belge Dili:

İngilizce

Document ID (Org No.):

2000760418

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101