Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer

Abdulkerim KARABULUT

Makale detayları

Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer

Yazarlar:

Abdulkerim KARABULUT

Yayıncı:

Igdir University

Ana Başlıklar:

Fizik

Dergi:

Journal of the Institute of Science and Technology 2018 Vol.8 Issue 3, pp.119-129

Belge Tipi:

Makale

Yayın Tarihi:

9/2018

Belge Dili:

İngilizce

Document ID (Org No.):

2000465744

Sıklık:

Üç Aylık

eISSN:

2536-4618

Özet:

 


In this study, Al/TiO2/p-Si/Al heterojunction is fabricated and investigated some electrical and dielectric

characteristics. Atomic layer deposition technique was used for synthesize of TiO2 interfacial layer due to the some

advantages such as uniformity and stability of surface. For determining electrical and dielectric characteristics,

impedance spectroscopy measurements were performed in range from -1 to +1 V bias voltages and 10 kHz-1MHz

frequency range at room temperature. As an electrical parameters, interface states distribution and series resistance

values was determined. In addition to these, it is found that the dielectric properties such as dielectric loss and

constant, real and imaginary parts of electric modulus, loss tangent and AC electric conductivity values was

depended on frequency and voltage strongly. The electrical and dielectric characteristics show that interface states

and polarization values of fabricated device can follow AC signal at low frequency values.

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Makale detayları

Dielectric Characterization of Si-Based Heterojunction with TiO2 Interfacial Layer

Yazarlar: Abdulkerim KARABULUT

Yayıncı: Igdir University

Ana Başlıklar: Fizik

Dergi: Journal of the Institute of Science and Technology 2018 Vol.8 Issue 3, pp.119-129

Belge Tipi: Makale

Yayın Tarihi: 9/2018

Belge Dili: İngilizce

Document ID (Org No.): 2000465744

Sıklık: Üç Aylık

eISSN: 2536-4618

Sayı

Yazarlar:

Abdulkerim KARABULUT

Yayıncı:

Igdir University

Ana Başlıklar:

Fizik

Dergi:

Journal of the Institute of Science and Technology 2018 Vol.8 Issue 3, pp.119-129

Belge Tipi:

Makale

Yayın Tarihi:

9/2018

Belge Dili:

İngilizce

Document ID (Org No.):

2000465744

Sıklık:

Üç Aylık

eISSN:

2536-4618