Annealing effects of ZnO thin films on p-Si(100) substrate deposited by PFCVAD

Kamuran KARA; Ebru Şenadim TÜZEMEN; Ramazan ESEN

Makale detayları

Annealing effects of ZnO thin films on p-Si(100) substrate deposited by PFCVAD

Yazarlar:

Kamuran KARA | Ebru Şenadim TÜZEMEN | Ramazan ESEN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2014 Vol.38 Issue 2, pp.238-244

Belge Tipi:

Makale

Yayın Tarihi:

1/2014

Belge Dili:

Türkçe

Document ID (Org No.):

2000760062

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

In this study, ZnO films were prepared on p-Si substrates   using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We   report the effect of annealing temperature on structural and optical   properties. The crystallographic structure and the size of the crystallites   in the films were studied by means of X-ray diffraction. The films had a   weak peak (100) orientation at 2theta = sim 32°. X-ray   diffraction analysis of the as-deposited ZnO and the film annealed at 850   °C showed a strong ZnO (002) diffraction peak centered at   34.1° and 34.5°, respectively. The (004) peak was seen for   film annealed at 850 °C. ZnO film annealed at 850 °C had   higher grain size and better crystallinity. Optical properties of the ZnO   films were studied using a UV-Vis-NIR spectrophotometer. The optical band   gap of the films was determined using the reflectance spectra by means of   the Kubelka-Munk formula. From the optical properties, the band gap energy   estimated for films as-deposited and annealed at 850 °C was 3.00   and 3.28 eV, respectively. The Raman scattering spectra of the films was   observed at a laser power of 2 mW.

 

In this study, ZnO films were prepared on p-Si substrates   using the pulsed filtered cathodic vacuum arc deposition (PFCVAD) method. We   report the effect of annealing temperature on structural and optical   properties. The crystallographic structure and the size of the crystallites   in the films were studied by means of X-ray diffraction. The films had a   weak peak (100) orientation at 2theta = sim 32°. X-ray   diffraction analysis of the as-deposited ZnO and the film annealed at 850   °C showed a strong ZnO (002) diffraction peak centered at   34.1° and 34.5°, respectively. The (004) peak was seen for   film annealed at 850 °C. ZnO film annealed at 850 °C had   higher grain size and better crystallinity. Optical properties of the ZnO   films were studied using a UV-Vis-NIR spectrophotometer. The optical band   gap of the films was determined using the reflectance spectra by means of   the Kubelka-Munk formula. From the optical properties, the band gap energy   estimated for films as-deposited and annealed at 850 °C was 3.00   and 3.28 eV, respectively. The Raman scattering spectra of the films was   observed at a laser power of 2 mW.

Makale detayları

Annealing effects of ZnO thin films on p-Si(100) substrate deposited by PFCVAD

Yazarlar:

Kamuran KARA | Ebru Şenadim TÜZEMEN | Ramazan ESEN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2014 Vol.38 Issue 2, pp.238-244

Belge Tipi:

Makale

Yayın Tarihi:

1/2014

Belge Dili:

Türkçe

Document ID (Org No.):

2000760062

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

ZnO

Kubelka-Munk function

Raman scattering

Sayı

Makale detayları

Annealing effects of ZnO thin films on p-Si(100) substrate deposited by PFCVAD

Yazarlar: Kamuran KARA | Ebru Şenadim TÜZEMEN | Ramazan ESEN

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2014 Vol.38 Issue 2, pp.238-244

Belge Tipi: Makale

Yayın Tarihi: 1/2014

Belge Dili: Türkçe

Document ID (Org No.): 2000760062

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

ZnO

Kubelka-Munk function

Raman scattering

Sayı

Yazarlar:

Kamuran KARA | Ebru Şenadim TÜZEMEN | Ramazan ESEN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2014 Vol.38 Issue 2, pp.238-244

Belge Tipi:

Makale

Yayın Tarihi:

1/2014

Belge Dili:

Türkçe

Document ID (Org No.):

2000760062

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101