Opto-Electrical Properties of Copper-Indium-Selenium Thin Films

S. F. SHAUKAT; S. A. KHAN; R. FAROOQ

Makale detayları

Opto-Electrical Properties of Copper-Indium-Selenium Thin Films

Yazarlar:

S. F. SHAUKAT | S. A. KHAN | R. FAROOQ

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2007 Vol.31 Issue 5, pp.265-270

Belge Tipi:

Makale

Yayın Tarihi:

4/2007

Belge Dili:

Türkçe

Document ID (Org No.):

2000761098

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

Copper-Indium-Selenium (CIS) thin films have been  characterised using various experimental techniques.  These compounds  are extensively used in solar cell technology as absorber layers due  to their exciting characteristics.  Optical transmission measurements on different compositions of CIS  films are observed and the absorption coefficient is determined.  The  Van der Pauw technique is used to divulge the electrical  characteristics of these films.  The electrical conductivity is found  relatively high for the films annealed in vacuum but decreases for  films synthesised optimally.  It is observed that p-type films have  higher conductivity than n-type films.  The grain size, composition,  structure and the spacing of the elements of CIS thin films are  revealed by XRD. The reaction temperature of CIS formation is 270 °C  in vacuum.  These properties are of great significance in  manufacturing solar cell devices.

 

Copper-Indium-Selenium (CIS) thin films have been  characterised using various experimental techniques.  These compounds  are extensively used in solar cell technology as absorber layers due  to their exciting characteristics.  Optical transmission measurements on different compositions of CIS  films are observed and the absorption coefficient is determined.  The  Van der Pauw technique is used to divulge the electrical  characteristics of these films.  The electrical conductivity is found  relatively high for the films annealed in vacuum but decreases for  films synthesised optimally.  It is observed that p-type films have  higher conductivity than n-type films.  The grain size, composition,  structure and the spacing of the elements of CIS thin films are  revealed by XRD. The reaction temperature of CIS formation is 270 °C  in vacuum.  These properties are of great significance in  manufacturing solar cell devices.

Makale detayları

Opto-Electrical Properties of Copper-Indium-Selenium Thin Films

Yazarlar:

S. F. SHAUKAT | S. A. KHAN | R. FAROOQ

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2007 Vol.31 Issue 5, pp.265-270

Belge Tipi:

Makale

Yayın Tarihi:

4/2007

Belge Dili:

Türkçe

Document ID (Org No.):

2000761098

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Solar cell devices

thin films

Sayı

Makale detayları

Opto-Electrical Properties of Copper-Indium-Selenium Thin Films

Yazarlar: S. F. SHAUKAT | S. A. KHAN | R. FAROOQ

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2007 Vol.31 Issue 5, pp.265-270

Belge Tipi: Makale

Yayın Tarihi: 4/2007

Belge Dili: Türkçe

Document ID (Org No.): 2000761098

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Solar cell devices

thin films

Sayı

Yazarlar:

S. F. SHAUKAT | S. A. KHAN | R. FAROOQ

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2007 Vol.31 Issue 5, pp.265-270

Belge Tipi:

Makale

Yayın Tarihi:

4/2007

Belge Dili:

Türkçe

Document ID (Org No.):

2000761098

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101