Class-E GaAs HBT power amplifier with passive linearization scheme for mobile wireless communications

Uthirajoo ESWARAN; Harikrishnan RAMIAH; Jeevan KANESAN; Ahmed Wasif REZA

Makale detayları

Class-E GaAs HBT power amplifier with passive linearization scheme for mobile wireless communications

Yazarlar:

Uthirajoo ESWARAN | Harikrishnan RAMIAH | Jeevan KANESAN | Ahmed Wasif REZA

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2014 Vol.22 Issue 5, pp.1210-1218

Belge Tipi:

Makale

Yayın Tarihi:

4/2014

Belge Dili:

Türkçe

Document ID (Org No.):

2000742859

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632

Özet:

 

A linearization technique for improving the class-E power  amplifier (PA)'s adjacent channel power ratio (ACPR) is proposed. The design  is simulated in a 2-mu m InGaP/GaAs heterojunction bipolar transistor  process. The integration of a passive predistorter at the input of the PA  linearizes the proposed architecture. At a 29-dBm output power, the PA's  ACPR is indicated to be -51 dBc, meeting the stringent code division  multiple access regulation. At this exact output power, the simulated power  added efficiency is 55 % with the collector voltage headroom consumption  of 3.4 V. The input return loss, S11, of the PA is simulated as -12.5 dB.  With an active finger print dimension of 1000 mu m \times  750 mu m,  the proposed PA is well suited for the application of mobile wireless  communication.

 

A linearization technique for improving the class-E power  amplifier (PA)'s adjacent channel power ratio (ACPR) is proposed. The design  is simulated in a 2-mu m InGaP/GaAs heterojunction bipolar transistor  process. The integration of a passive predistorter at the input of the PA  linearizes the proposed architecture. At a 29-dBm output power, the PA's  ACPR is indicated to be -51 dBc, meeting the stringent code division  multiple access regulation. At this exact output power, the simulated power  added efficiency is 55 % with the collector voltage headroom consumption  of 3.4 V. The input return loss, S11, of the PA is simulated as -12.5 dB.  With an active finger print dimension of 1000 mu m \times  750 mu m,  the proposed PA is well suited for the application of mobile wireless  communication.

Makale detayları

Class-E GaAs HBT power amplifier with passive linearization scheme for mobile wireless communications

Yazarlar: Uthirajoo ESWARAN | Harikrishnan RAMIAH | Jeevan KANESAN | Ahmed Wasif REZA

Yayıncı: TUBITAK

Dergi: Turkish Journal of Electrical Engineering and Computer Science 2014 Vol.22 Issue 5, pp.1210-1218

Belge Tipi: Makale

Yayın Tarihi: 4/2014

Belge Dili: Türkçe

Document ID (Org No.): 2000742859

Sıklık: İki Aylık

eISSN: 1303-6203

pISSN: 1300-0632

Sayı

Yazarlar:

Uthirajoo ESWARAN | Harikrishnan RAMIAH | Jeevan KANESAN | Ahmed Wasif REZA

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2014 Vol.22 Issue 5, pp.1210-1218

Belge Tipi:

Makale

Yayın Tarihi:

4/2014

Belge Dili:

Türkçe

Document ID (Org No.):

2000742859

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632