An approach based on particle swarm computation to study the nanoscale DG MOSFET-based circuits

Faycal DJEFFAL; Toufik BENDIB; Redha BENZID; Abdelhamid BENHAYA

Makale detayları

An approach based on particle swarm computation to study the nanoscale DG MOSFET-based circuits

Yazarlar:

Faycal DJEFFAL | Toufik BENDIB | Redha BENZID | Abdelhamid BENHAYA

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2010 Vol.18 Issue 6, pp.1131-1141

Belge Tipi:

Makale

Yayın Tarihi:

5/2010

Belge Dili:

Türkçe

Document ID (Org No.):

2000743864

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632

Özet:

 

The analytical modeling of nanoscale Double-Gate MOSFETs  (DG) requires generally several necessary simplifying assumptions to  lead to compact expressions of current-voltage characteristics for  nanoscale CMOS circuits design.  Further, progress in the development,  design and optimization of nanoscale devices necessarily require new  theory and modeling tools in order to improve the accuracy and the  computational time of circuits' simulators.  In this paper, we propose  a new particle swarm strategy to study the nanoscale CMOS circuits.  The latter is based on the 2-D numerical Non-Equilibrium Green's  Function (NEGF) simulation and a new extended long channel DG MOSFET  compact model.  Good agreement between our results and numerical  simulations has been found.  The developed model can also be  incorporated into the nano-CMOS circuits' simulators to study  CMOS-based devices without impact on the computational time and data  storage.

 

The analytical modeling of nanoscale Double-Gate MOSFETs  (DG) requires generally several necessary simplifying assumptions to  lead to compact expressions of current-voltage characteristics for  nanoscale CMOS circuits design.  Further, progress in the development,  design and optimization of nanoscale devices necessarily require new  theory and modeling tools in order to improve the accuracy and the  computational time of circuits' simulators.  In this paper, we propose  a new particle swarm strategy to study the nanoscale CMOS circuits.  The latter is based on the 2-D numerical Non-Equilibrium Green's  Function (NEGF) simulation and a new extended long channel DG MOSFET  compact model.  Good agreement between our results and numerical  simulations has been found.  The developed model can also be  incorporated into the nano-CMOS circuits' simulators to study  CMOS-based devices without impact on the computational time and data  storage.

Makale detayları

An approach based on particle swarm computation to study the nanoscale DG MOSFET-based circuits

Yazarlar: Faycal DJEFFAL | Toufik BENDIB | Redha BENZID | Abdelhamid BENHAYA

Yayıncı: TUBITAK

Dergi: Turkish Journal of Electrical Engineering and Computer Science 2010 Vol.18 Issue 6, pp.1131-1141

Belge Tipi: Makale

Yayın Tarihi: 5/2010

Belge Dili: Türkçe

Document ID (Org No.): 2000743864

Sıklık: İki Aylık

eISSN: 1303-6203

pISSN: 1300-0632

Sayı

Yazarlar:

Faycal DJEFFAL | Toufik BENDIB | Redha BENZID | Abdelhamid BENHAYA

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Electrical Engineering and Computer Science 2010 Vol.18 Issue 6, pp.1131-1141

Belge Tipi:

Makale

Yayın Tarihi:

5/2010

Belge Dili:

Türkçe

Document ID (Org No.):

2000743864

Sıklık:

İki Aylık

eISSN:

1303-6203

pISSN:

1300-0632