Annealing and deposition time effects on the structural, optical, and   electrical properties of indium sulfide thin films produced by chemical bath   deposition method

Emine GÜNERİ; Fatma GÖDE

Makale detayları

Annealing and deposition time effects on the structural, optical, and electrical properties of indium sulfide thin films produced by chemical bath deposition method

Yazarlar:

Emine GÜNERİ | Fatma GÖDE

Yayıncı:

TUBITAK

Ana Başlıklar:

Fizik

Dergi:

Turkish Journal of Physics 2017 Vol.41 Issue 4, pp.359-366

Belge Tipi:

Makale

Yayın Tarihi:

7/2017

Belge Dili:

İngilizce

Document ID (Org No.):

2000759615

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Özet:

 

Indium sulfide thin films were deposited onto   indium-doped tin-oxide substrates with different deposition times (60 h, 63   h, 66 h, and 69 h) at room temperature by using a chemical bath deposition   method to obtain new structures for solar cells. The film obtained at 60 h   was annealed at 400 ∘∘^{\circ}C for 1 h in nitrogen media. The   crystallographic structure of the films was observed via the X-ray   diffraction pattern while the size and shape of the grains were   characterized by scanning electron microscopy. Moreover, the optical   transmission spectra of the films were obtained at room temperature in the   wavelength range of 300-1100 nm. After the films were annealed, the optical   transmission decreased from 52% to 26% at a wavelength of 550 nm. With   increasing film thickness and grain size, the direct and indirect optical   band gap of the InS films decreased from 2.31 eV to 2.19 eV and from 1.89 eV   to 1.75 eV, respectively. The refractive index, extinction coefficient, and   dielectric constant of the films were determined. The sheet resistivity of   the films decreased from 33 ΩΩ\Omega  cm to 28 ΩΩ\Omega  cm with increasing   grain size.

Makale detayları

Annealing and deposition time effects on the structural, optical, and electrical properties of indium sulfide thin films produced by chemical bath deposition method

Yazarlar: Emine GÜNERİ | Fatma GÖDE

Yayıncı: TUBITAK

Ana Başlıklar: Fizik

Dergi: Turkish Journal of Physics 2017 Vol.41 Issue 4, pp.359-366

Belge Tipi: Makale

Yayın Tarihi: 7/2017

Belge Dili: İngilizce

Document ID (Org No.): 2000759615

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Sayı

Yazarlar:

Emine GÜNERİ | Fatma GÖDE

Yayıncı:

TUBITAK

Ana Başlıklar:

Fizik

Dergi:

Turkish Journal of Physics 2017 Vol.41 Issue 4, pp.359-366

Belge Tipi:

Makale

Yayın Tarihi:

7/2017

Belge Dili:

İngilizce

Document ID (Org No.):

2000759615

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101