Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si

M. ŞAHİN; S. ÖZDER; R. TURAN

Makale detayları

Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si

Yazarlar:

M. ŞAHİN | S. ÖZDER | R. TURAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2001 Vol.25 Issue 1, pp.43-52

Belge Tipi:

Makale

Yayın Tarihi:

12/2000

Belge Dili:

Türkçe

Document ID (Org No.):

2000762540

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Anahtar kelimeler:

Özet:

 

Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted  Si have been investigated by using C-V and G-V measurements.  The  control sample on pure Si substrate yielded normal C-V and G-V  characteristics. The Ge-implanted MOS samples exhibited anomalous C-V  and G-V behavior.  The C-V curves of the samples were strongly  frequency dependent both in the accumulation and inversion regions.   They shift almost in parallel to higher values with decreasing  frequency, reaching the oxide capacitance value in the quasi-static  (QS) measurement.  A band structure and equivalent circuit model were  introduced to explain this and other features of the experimental  observations.  It is shown that the presence of a thin SiGe layer  and/or trap states related to this layer may cause a frequency  dispersion in the accumulation region of the C-V curves of MOS  capacitors.

 

Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted  Si have been investigated by using C-V and G-V measurements.  The  control sample on pure Si substrate yielded normal C-V and G-V  characteristics. The Ge-implanted MOS samples exhibited anomalous C-V  and G-V behavior.  The C-V curves of the samples were strongly  frequency dependent both in the accumulation and inversion regions.   They shift almost in parallel to higher values with decreasing  frequency, reaching the oxide capacitance value in the quasi-static  (QS) measurement.  A band structure and equivalent circuit model were  introduced to explain this and other features of the experimental  observations.  It is shown that the presence of a thin SiGe layer  and/or trap states related to this layer may cause a frequency  dispersion in the accumulation region of the C-V curves of MOS  capacitors.

Makale detayları

Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si

Yazarlar:

M. ŞAHİN | S. ÖZDER | R. TURAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2001 Vol.25 Issue 1, pp.43-52

Belge Tipi:

Makale

Yayın Tarihi:

12/2000

Belge Dili:

Türkçe

Document ID (Org No.):

2000762540

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101

Turk. J. Phys.

25

(2001)

43-52. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.25

iss.1.

Sayı

Makale detayları

Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si

Yazarlar: M. ŞAHİN | S. ÖZDER | R. TURAN

Yayıncı: TUBITAK

Dergi: Turkish Journal of Physics 2001 Vol.25 Issue 1, pp.43-52

Belge Tipi: Makale

Yayın Tarihi: 12/2000

Belge Dili: Türkçe

Document ID (Org No.): 2000762540

Sıklık: İki Aylık

eISSN: 1303-6122

pISSN: 1300-0101

Turk. J. Phys.

25

(2001)

43-52. Full text: pdf Other articles published in the same issue: Turk. J. Phys.

vol.25

iss.1.

Sayı

Yazarlar:

M. ŞAHİN | S. ÖZDER | R. TURAN

Yayıncı:

TUBITAK

Dergi:

Turkish Journal of Physics 2001 Vol.25 Issue 1, pp.43-52

Belge Tipi:

Makale

Yayın Tarihi:

12/2000

Belge Dili:

Türkçe

Document ID (Org No.):

2000762540

Sıklık:

İki Aylık

eISSN:

1303-6122

pISSN:

1300-0101